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A method for manufacturing the insulating layers of a glass multilayer wiring board from a mixture of (1) 30-90 wt. % of a borosilicate glass consisting of 55-75 wt. % of SiO 2, 13-25 wt. % of B 2 O 3, 5-13 wt. % of Al 2 O 3, each 1-5 wt. % of PbO, MgO, and BaO, and each 1-2 wt. % of Na 2 O and K 2

A method for manufacturing the insulating layers of a glass multilayer wiring board from a mixture of (1) 30-90 wt. % of a borosilicate glass consisting of 55-75 wt. % of SiO 2, 13-25 wt. % of B 2 O 3, 5-13 wt. % of Al 2 O 3, each 1-5 wt. % of PbO, MgO, and BaO, and each 1-2 wt. % of Na 2 O and K 2 O and (2) 70-10 wt. % of a silica glass, is provided.

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1. A sintered glass multilayer wiring board consisting essentially of 70-10 wt.% of silica glass and 30-90 wt.% of a borosilicate glass consisting essentially of 55-75 wt.% of SiO 2, 13-25 wt.% of B 2 O 3, 5-13 wt.% of Al 2 O 3, each 1-5 wt.% of PbO, MgO and BaO, and each 1-2 wt.% of Na 2 O and K 2

1. A sintered glass multilayer wiring board consisting essentially of 70-10 wt.% of silica glass and 30-90 wt.% of a borosilicate glass consisting essentially of 55-75 wt.% of SiO 2, 13-25 wt.% of B 2 O 3, 5-13 wt.% of Al 2 O 3, each 1-5 wt.% of PbO, MgO and BaO, and each 1-2 wt.% of Na 2 O and K 2 O, said wiring board having a relative dielectric constant below 5 and being sintered at a temperature of at most 900° C. 2. A sintered glass multilayer wiring board according to claim 1, said board comprising a plurality of sheets laminated to each other, the sheets consisting essentially of 70-10 wt% of said silica glass and 30-90 wt% of said borosilicate glass. 3. A sintered glass multilayer wiring board according to claim 2, wherein said sheets have formed thereon, prior to laminating the plurality of sheets, a wiring conductor, said wiring conductor being formed of a low-resistance conducting material. 4. A sintered glass multilayer wiring board according to claim 1, wherein said board has formed thereon, prior to sintering thereof, a conductor comprising a low-resistance conducting material. 5. An improved method for making a glass multilayer wiring board in which a plural number of green sheets carrying each a wiring conductor are arranged to form a laminated assembly and the assembly is sintered, wherein the improvement comprises a sequence of the steps of making a green sheet from a mixture consisting essentially of silica glass powder and a borosilicate glass powder consisting essentially of 55-75 wt.% of SiO 2, 13-25 wt.% of B 2 O 3, 5-13 wt.% of Al 2 O 3, each 1-5 wt.% of PbO, MgO and BaO, and each 1-2 wt.% of Na 2 O and K 2 O, the silica glass content of said mixture being 10-70 wt.%; forming on said green sheet a conductor comprising a low-resistance conducting material; placing a number of green sheets carrying the conductor one over another to form a multilayer assembly; and sintering the multilayer assembly, said sintering the multilayer assembly performed at a temperature of at most 900° C., whereby a wiring board having a relative dielectric constant below 5 is formed while deformation of the conductor due to flow of glass during heat treatment is prevented. 6. A method for making a glass multilayer wiring board according to claim 5, wherein the low-resistance conducting material comprises gold, silver, or copper and 0-10 wt.% of the said borosilicate glass powder. 7. A method for making a glass multilayer wiring board according to claim 5, wherein said low-resistance conducting material is copper, and wherein the sintering is carried out in a nitrogen atmosphere. 8. A method for forming a sintered glass multilayer wiring board comprising the steps of preparing a mixture consisting essentially of borosilicate glass powder and silica glass powder, said mixture being 70 to 10 wt% of silica glass and 30 to 90 wt% of borosilicate glass consisting essentially of 55-75 wt% of SiO 2, 13-25 wt% of B 2 O 3, 5-13 wt% of Al 2 O 3, each 1-5 wt% of PbO, MgO and BaO, and each 1-2 wt% of Na 2 O and K 2 O; forming the mixture into a green sheet; and sintering said green sheet at a temperature of at most 900° C. to form said board, whereby a wiring board having a relative dielectric constant below 5 is formed. 9. A method for forming a sintered glass multilayer wiring board according to claim 8, wherein a plurality of green sheets of said mixture are formed, and are laminated on one another to form multiple layers, and then the sintering is performed to sinter the laminate of green sheets. 10. Product formed by the process of claim 8. 11. Product formed by the process of claim 9. 12. A method for making a glass multilayer wiring board according to claim 8, wherein said green sheet has formed thereon, prior to sintering thereof, a conductor of copper in the form of a wiring pattern, and wherein the sintering is carried out in a nitrogen atmosphere. 13. A method for forming a sintered glass multilayer wiring board according to claim 8, wherein, prior to said sintering, a wiring pattern of a low-resistance conducting material is formed on said green sheet.