초록 ▼

A process for the removal of hydrogen halides including HCl and HF, and/or sulfur dioxide from silicon tetrafluoride. Contaminated gaseous silicon tetrafluoride is passed through a column of zeolite preferably in the hydrogen cation form so as to permit recovery of silicon tetrafluoride containing l

A process for the removal of hydrogen halides including HCl and HF, and/or sulfur dioxide from silicon tetrafluoride. Contaminated gaseous silicon tetrafluoride is passed through a column of zeolite preferably in the hydrogen cation form so as to permit recovery of silicon tetrafluoride containing less than about 10% of the original contamination levels. Acid-stable zeolite materials suitable for the process of the invention are subjected to a flow of hot gases to permit regeneration of the column for use in a semicontinuous process.

대표청구항 ▼

1. A method of purifying gaseous silicon tetrafluoride contaminated with at least one member selected from the group consisting of sulfur dioxide and HX where X is a halide, said method comprising the steps of contacting gaseous silicon tetrafluoride with an acidstable mordenite zeolite that selecti

1. A method of purifying gaseous silicon tetrafluoride contaminated with at least one member selected from the group consisting of sulfur dioxide and HX where X is a halide, said method comprising the steps of contacting gaseous silicon tetrafluoride with an acidstable mordenite zeolite that selectively removes said at least one member and recovering the purified gaseous silicon tetrafluoride. 2. The method of claim 1 wherein said at least one member is HX. 3. The method of claim 2 wherein X is chloride. 4. The method of claim 2 wherein X is fluoride. 5. The method of claim 2 wherein said silicon tetrafluoride is also contaminated with sulfur dioxide and said step of contacting gaseous silicon tetrafluoride with an acid-stable mordenite zeolite selectively removes both HX and sulfur dioxide. 6. The method of claim 2 wherein said silicon tetrafluoride contains up to about 10 mole percent HX and the silicon tetrafluoride is contacted with said mordenite zeolite so as to remove at least about 90% of the HX. 7. The method of claim 1 wherein said mordenite zoelite is of the hydrogen cation form. 8. The method of claim 7 wherein about one part or less by weight hydrogen cation form of mordenite is used per part of silicon tetrafluoride. 9. The method of claim 7 wherein said silicon tetrafluoride contains at least about 2 weight percent HX. 10. The process of claim 7 wherein said silicon tetrafluoride contaminated with HX also contains sulfur dioxide. 11. The method of claim 7 wherein said method is carried out in a column of said mordenite zeolite. 12. The method of claim 7 carried out at a temperature below about 30° C. 13. The method of claim 1 wherein said at least one member is sulfur dioxide. 14. The process of claim 13 wherein said mordenite zeolite is in the hydrogen cation form. 15. The process of claim 14 wherein up to about one part by weight hydrogen cation form mordenite is used to contact said silicon tetrafluoride per part contaminated silicon tetrafluoride. 16. The process of claim 14 carried out at a temperature below about 30° C. 17. A semicontinuous process for the removal of HX where X is a halide from a stream of gaseous silicon tetrafluoride containing a deleterious amount of HX, said process comprising the steps of: (a) passing said stream through a column packed with an acidstable mordenite zeolite stream with an HX content of less than about 10% of the original contamination until the column is so saturated that it permits breakthrough of HX above about 10% of the original contamination; (b) regenerating the column and recovering silicon tetrafluoride purified to less than about 10% of the stream contamination; and (c) repeating step a). 18. The process of claim 1 wherein said mordenite is of the hydrogen cation form. 19. The semicontinuous process of claim 17 wherein said regenerating comprises contacting said column with a gas which removes HX from the zeolite. 20. The process of claim 19 wherein said gas is nitrogen. 21. The process of claim 19 wherein said gas is heated to about 230° F. and blown through said column until said mordenite zeolite in said column reaches about 200° F. 22. The process of claim 19 wherein the gas is passed through said column in said opposite direction from the silicon tetrafluoride stream. 23. A semicontinuous process for the removal of sulfur dioxide from a stream of gaseous silicon tetrafluoride containing a deleterious amount of sulfur dioxide, said process comprising the steps of: (a) passing said stream through a column packed with an acidstable mordenite zeolite and recovering said stream with a sulfur dioxide content of less than about 10% of the original contamination until the column is so saturated that it permits breakthrough of sulfur dioxide above about 10% of the original contamination; (b) regenerating the column and recovering silicon tetrafluoride purified to less than about 10% of the stream contamination; and (c) repeating step a).