초록 ▼

A method is disclosed of forming a fine pattern on a substrate, in which an etching mask pattern is formed on a layer of material of a pattern to be formed, an overlying layer is deposited on the pattern material layer and the mask pattern, and thereafter, the overlying layer and the pattern materia

A method is disclosed of forming a fine pattern on a substrate, in which an etching mask pattern is formed on a layer of material of a pattern to be formed, an overlying layer is deposited on the pattern material layer and the mask pattern, and thereafter, the overlying layer and the pattern material layer are etched by ion etching. This method makes it possible, due to the pattern-widening effect caused by the deposition of the overlying layer and by the use of ion etching, to form a pattern having a gap smaller than 0.5 mmm

대표청구항 ▼

A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) depositing a layer of a pattern material on the surface of said substate; (b) forming an etching mask pattern having a first gap on said pattern material layer; (c) depositing a pattern-widening overlying l

A method for forming a pattern having a fine gap on a substrate, comprising the steps of: (a) depositing a layer of a pattern material on the surface of said substate; (b) forming an etching mask pattern having a first gap on said pattern material layer; (c) depositing a pattern-widening overlying layer which substantially maintains the topography of the mask pattern on the exposed surfaces of said pattern material layer and on the mask pattern, thereby forming a second gap which is smaller than the first gap; and (d) etching said overlying layer and said pattern material layer by ion etching employing energized particles of an inert gas, thereby forming said pattern having said fine gap which is smaller than said second gap from said pattern material layer.