초록

Pressurized gas is applied between a wafer and electrode in a plasma etching system. Gas between the wafer and electrode provides cooling of the wafer. A control arrangement maintains the gas at a predetermined pressure.

대표청구항 ▼

In combination with a plasma etching reactor having a process chamber, including a pair of electrodes, for receiving a process gas therein, with one of said electrodes being a chuck electrode for receiving thereon a wafer having a film to be etched, means for cooling said wafer during operation of s

In combination with a plasma etching reactor having a process chamber, including a pair of electrodes, for receiving a process gas therein, with one of said electrodes being a chuck electrode for receiving thereon a wafer having a film to be etched, means for cooling said wafer during operation of said plasma etching reactor comprising: means for cooling said chuck electrode; means for applying a pressurized gas film between said wafer and said chuck electrode to provide a heat transfer medium between said wafer and said chuck electrode; and said chuck electrode being domed shaped to minimize the gap between said wafer and said chuck electrode when said wafer bows under pressure.