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Method of and apparatus for detecting an end point of plasma treatment

국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
  • B44C-001/22
  • C03C-015/00
  • C23F-001/02
출원번호 US-0712032 (1985-03-15)
발명자 / 주소
  • Tada Keiji (Kudamatsu JPX) Fujii Takashi (Kudamatsu JPX) Marumoto Gen (Kudamatsu JPX) Jyouo Kazuhiro (Kudamatsu JPX) Fujisawa Takahiro (Yanai JPX)
출원인 / 주소
  • Hitachi, Ltd. (Tokyo JPX 03) Hitachi Sanki Eng Co., Ltd. (Tokyo JPX 03)
인용정보 피인용 횟수 : 41  인용 특허 : 2

초록

The present invention relates to a method of and apparatus for detecting the end point of plasma treatment. The method includes steps: selecting a plasma spectrum having a characteristic wavelength from the plasma spectrum occurring at the time of the plasma treatment reaction of a specimen; computi

대표청구항

A method of detecting the end point of plasma treatment comprising a step of selecting plasma spectrum having a characteristic wavelength from the plasma spectrum occurring at the time of reaction of the plasma treatment of a specimen, a step of computing a secondary differential value of a function

이 특허에 인용된 특허 (2)

  1. Gelernt Barry (Bridgeport CT) Wang C. Wallace (Wilton CT), End-point detection in plasma etching or phosphosilicate glass.
  2. Jerde Leslie G. (Hopewell Township ; Mercer County NJ) Lory Earl R. (Pennington NJ) Muething Kevin A. (Hillsborough Township ; Somerset County NJ) Tsou Len Y. (Lawrence Township ; Mercer County NJ), Optical emission end point detector.

이 특허를 인용한 특허 (41)

  1. Dennis Timothy A. (Bloom Township ; Wood County OH), Apparatus and method for maintaining a uniform etching solution composition.
  2. Flinchbaugh Bruce E. (Dallas TX) Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Reese Jon (Waxahachie TX), Apparatus and method for production process diagnosis using dynamic time warping.
  3. Mikoshiba Nobuo,JPX ; Ohmi Tadahiro,JPX ; Tsubouchi Kazuo,JPX ; Masu Kazuya,JPX ; Suzuki Nobumasa,JPX, Chemical vapor deposition apparatus.
  4. Rulkens, Ron; Florin, Didier, Endpoint detection for high density plasma (HDP) processes.
  5. Usui, Tatehito; Yoshioka, Ken; Ikuhara, Shoji; Nishihata, Kouji; Takahashi, Kazue; Kaji, Tetsunori; Nakamoto, Shigeru, Etching end point judging method, etching end point judging device, and insulating film etching method using these methods.
  6. Winniczek, Jaroslaw W., Full spectrum endpoint detection.
  7. Seamons Martin ; Ching Cary ; Imaoka Kou,JPX ; Sato Tatsuya,JPX ; Ravi Tirunelveli S. ; Triplett Michael C., Gas chemistry for improved in-situ cleaning of residue for a CVD apparatus.
  8. Anthony L. Chen ; John Holland, Gas purge protection of sensors and windows in a gas phase processing reactor.
  9. Chen Anthony L. ; Holland John, Gas purge protection of sensors and windows in a gas phase processing reactor.
  10. Liu Alexander F., Method and apparatus for detecting optimal endpoints in plasma etch processes.
  11. Klippert ; II Walter E ; Kadavanich Vikorn Martin,DEX, Method and apparatus for improving accuracy of plasma etching process.
  12. Klippert II Walter E ; Kadavanich Vikorn Martin,DEX, Method and apparatus for improving accuracy of plasma etching process.
  13. Auda Bernard (Montlhery FRX), Method and apparatus for in-situ and on-line monitoring of trench formation process.
  14. Michael Lane Smith, Jr. ; Joel O'Don Stevenson ; Pamela Peardon Denise Ward, Method and apparatus for monitoring plasma processing operations.
  15. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  16. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  17. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  18. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  19. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  20. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  21. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  22. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  23. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  24. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  25. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  26. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  27. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  28. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  29. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  30. Smith ; Jr. Michael Lane ; Stevenson Joel O'Don ; Ward Pamela Peardon Denise, Method and apparatus for monitoring plasma processing operations.
  31. Thomas Frederick Allen Bibby, Jr. ; John A. Adams, Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP.
  32. Saito Susumu,JPX, Method and device for detecting the end point of plasma process.
  33. Powell, Gary, Method and device utilizing real-time gas sampling.
  34. Shiobara, Toshitaka, Method for detecting an end point of etching in a plasma-enhanced etching process.
  35. Becker Volker,DEX ; Laermer Franz,DEX ; Schilp Andrea,DEX, Method for detecting the transition between different materials in semiconductor structures.
  36. Ikuhara Shoji (Kudamatsu JPX) Tada Keiji (Kudamatsu JPX) Kawasaki Yoshinao (Kudamatsu JPX) Kudo Katsuyoshi (Kudamatsu JPX) Soraoka Minoru (Kudamatsu JPX), Method of detecting an end point of plasma treatment.
  37. Keller John H. (Poughkeepsie NY) Selwyn Gary S. (Hopewell Junction NY) Singh Jyothi (Hopewell Junction NY), Plasma amplified photoelectron process endpoint detection apparatus.
  38. Ishihara Hiroyuki,JPX ; Kawamura Kohei,JPX, Plasma processing method in semiconductor processing system.
  39. Barna Gabriel G. (Richardson TX) Ratliff Charles (Richardson TX), Process and apparatus for detecting aberrations in production process operations.
  40. Dolins Steven B. (Dallas TX) Srivastava Aditya (Richardson TX) Flinchbaugh Bruce E. (Dallas TX) Gunturi Sarma S. (Richardson TX) Lassiter Thomas W. (Garland TX) Love Robert L. (McKinney TX), Process and apparatus for detecting aberrations in production process operations.
  41. Kitsunai, Hiroyuki; Tanaka, Junichi; Fujii, Takashi; Yoshigai, Motohiko, Process for producing a semiconductor device including etching using a multi-step etching treatment having different gas compositions in each step.
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