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A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the sm

A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different materials, at least the material with the smallest bandgap being an indirect bandgap material.

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A semiconductor device comprising a superlattice having direct transitions between conduction band and valence band states with the same wavector, said superlattice consisting of a plurality of alternating layers of at least two different materials, at least the material having the smallest band gap

A semiconductor device comprising a superlattice having direct transitions between conduction band and valence band states with the same wavector, said superlattice consisting of a plurality of alternating layers of at least two different materials, at least the material having the smallest band gap having indirect transitions between conduction bahd and valence band states with unequal wavevectors, each of said layers being grown along the direction in which indirect conduction minima lie.