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[미국특허] Focused ion beam processing 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/00
출원번호 US-0726713 (1985-04-24)
발명자 / 주소
  • Doherty John A. (Sudbury MA) Ward Billy W. (Rockport MA) Shaver David C. (Carlisle MA)
출원인 / 주소
  • Micrion Limited Partnership (Beverly MA 02)
인용정보 피인용 횟수 : 69  인용 특허 : 7

초록 ▼

An apparatus is described which makes possible the precise sputter etching and imaging of insulating and other targets, using a finely focused beam of ions produced from a liquid metal ion source. This apparatus produces and controls a submicron beam of ions to precisely sputter etch the target. A b

대표청구항 ▼

Focused ion beam processing apparatus comprising, a source of a finely focused ion beam of submicron shape for impingement upon a substrate surface in a predetermined surface plane, a source of an electron beam, and means for directing said electron beam toward said surface plane in a region embraci

이 특허에 인용된 특허 (7) 인용/피인용 타임라인 분석

  1. Robertson David A. (West Newbury MA) Turner Norman L. (Gloucester MA), Apparatus for enhanced neutralization of positively charged ion beam.
    상세보기
  2. Tamura Hifumi (Hachioji JPX) Ishitani Tohru (Sayama JPX) Shimase Akira (Yokohama JPX), Apparatus for irradiation with charged particle beams.
    상세보기
  3. Cuomo, Jerome J.; Kaufman, Harold R., Hall ion generator for working surfaces with a low energy high intensity ion beam.
    상세보기
  4. Trotel Jacques (Paris FRX), Microlithographic system using a charged particle beam.
    상세보기
  5. Takigawa Tadahiro (Tokyo JPX), Processing method using a focused ion beam.
    상세보기
  6. McMillan, Michael R., Synthetic plasma ion source.
    상세보기
  7. Sadeh Yaacov (Beersheva ILX), Three dimensional digitizer for digitizing the surface contour of a solid body.
    상세보기

이 특허를 인용한 특허 (69) 인용/피인용 타임라인 분석

  1. Nakao Shuji (Itami JPX), Apparatus utilizing charged particles.
    상세보기
  2. Ward,Billy W., Atomic level ion source and method of manufacture and operation.
    상세보기
  3. Phaneuf Michael,CAX ; James Dick,CAX ; Breton Pierrette,CAX ; Elvidge Julia,CAX ; Haythornthwaite Ray,CAX, Automated method of circuit analysis.
    상세보기
  4. Michael Phaneuf CA; Dick James CA; Julia Elvidge CA; Pierrette Breton CA; Terry Ludlow CA; David Skoll CA; Bryan Socransky CA; Louise Weaver NL; Ray Haythornthwaite CA, Automatic focused ion beam imaging system and method.
    상세보기
  5. Thompson Dennis A. ; Howe Bryan L., Backside thinning using ion-beam figuring.
    상세보기
  6. Bret, Tristan; Hoffmann, Patrik; Rossi, Michel; Multone, Xavier, Beam-induced etching.
    상세보기
  7. Bret, Tristan; Hoffmann, Patrik; Rossi, Michel; Multone, Xavier, Beam-induced etching.
    상세보기
  8. Zarchin, Oren; Shofman, Semyon, Charged particle detection system and method.
    상세보기
  9. Brodie, Alan; Nasser-Ghodsi, Mehran, Contamination pinning for auger analysis.
    상세보기
  10. Larson Paul E. ; Kelly Michael A., Control of surface potential of insulating specimens in surface analysis.
    상세보기
  11. Notte, IV, John A., Determining dopant information.
    상세보기
  12. Jean-Pierre Briand FR, Device and method for ion beam etching using space-time detection.
    상세보기
  13. James Gordon Charters Smith GB; Andrew David Garry Stewart GB, Diamond marking.
    상세보기
  14. Musil, Christian R.; Casey, Jr., J. David; Gannon, Thomas J.; Chandler, Clive; Da, Xiadong, Electron beam processing.
    상세보기
  15. Stewart, Diane K.; Casey, Jr., J. David; Casey, legal representative, Joan Williams; Beaty, John; Musil, Christian R.; Berger, Steven; Sijbrandij, Sybren J., Electron beam processing for mask repair.
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  16. Ward Billy W. (Rockport MA) Ward Michael L. (Gloucester MA), Focused ion beam imaging and process control.
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  17. Pellin Michael J. ; Lykke Keith R. ; Lill Thorsten B., Focused ion beam source method and apparatus.
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  18. Ohkawa Tihiro, Grazing angle plasma polisher (GAPP).
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  19. Parker Norman W. (Westlake Village CA) Turnbull William G. (Newbury Park CA) Robinson William P. (Newbury Park CA), Integrated charge neutralization and imaging system.
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  20. Slingerland Hendrik N. (Delft NLX), Ion beam apparatus for finishing patterns.
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  21. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond, Ion sources, systems and methods.
    상세보기
  22. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond, Ion sources, systems and methods.
    상세보기
  23. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond, Ion sources, systems and methods.
    상세보기
  24. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond; Edinger, Klaus; Markwort, Lars; Aderhold, Dirk; Mantz, Ulrich, Ion sources, systems and methods.
    상세보기
  25. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond; Edinger, Klaus; Markwort, Lars; Aderhold, Dirk; Mantz, Ulrich, Ion sources, systems and methods.
    상세보기
  26. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond; Groholski, Alexander; Comunale, Richard, Ion sources, systems and methods.
    상세보기
  27. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond; Groholski, Alexander; Comunale, Richard, Ion sources, systems and methods.
    상세보기
  28. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond; Mantz, Ulrich; Steigerwald, Michael, Ion sources, systems and methods.
    상세보기
  29. Ward, Billy W.; Notte, IV, John A.; Farkas, III, Louis S.; Percival, Randall G.; Hill, Raymond; McVey, Shawn; Bihr, Johannes, Ion sources, systems and methods.
    상세보기
  30. Ward, Billy W.; Notte, IV, John A.; Farkas, Louis S.; Percival, Randall G.; Hill, Raymond; Edinger, Klaus; Markwort, Lars; Aderhold, Dirk; Mantz, Ulrich, Ion sources, systems and methods.
    상세보기
  31. Ward, Billy W.; Notte, John A.; Farkas, Louis S.; Percival, Randall G.; Hill, Raymond; Edinger, Klaus; Markwort, Lars; Aderhold, Dirk; Mantz, Ulrich, Ion sources, systems and methods.
    상세보기
  32. Ward,Billy W.; Notte, IV,John A.; Farkas, III,Louis S.; Percival,Randall G.; Hill,Raymond, Ion sources, systems and methods.
    상세보기
  33. Ward,Billy W.; Notte, IV,John A.; Farkas, III,Louis S.; Percival,Randall G.; Hill,Raymond; Markwort,Lars; Aderhold,Dirk, Ion sources, systems and methods.
    상세보기
  34. Ohnishi Tsuyoshi (Kokubunji JPX) Ishitani Tohru (Sayama JPX) Kawanami Yoshimi (Fuchu JPX), Ion-beam machining method and apparatus.
    상세보기
  35. Coldren Larry A. (Santa Barbara CA) Skidmore Jay A. (Goleta CA), Low damage-producing, anisotropic, chemically enhanced etching method and apparatus.
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  36. Nakagawa Yoshitomo (Tokyo JPX) Yamaoka Takehiro (Tokyo JPX), Method and apparatus for modifying patterned film.
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  37. Skinner, Wesley J.; Kirkpatrick, Allen R., Method and apparatus for smoothing thin conductive films by gas cluster ion beam.
    상세보기
  38. Campbell Gregor A. (Glendale CA) Conn Robert W. (Los Angeles CA) Goebel Dan M. (Santa Monica CA) Adam Rolf (Hanau DEX) Aichert Hans (Hanau DEX) Betz Hans (Bruchkoebel DEX) Dietrich Anton (Wiesenfeld , Method and apparatus for the application of materials.
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  39. Auth, Nicole; Spies, Petra; Becker, Rainer; Hofmann, Thorsten; Edinger, Klaus, Method for electron beam induced etching.
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  40. Auth, Nicole; Spies, Petra; Becker, Rainer; Hofmann, Thorsten; Edinger, Klaus, Method for electron beam induced etching of layers contaminated with gallium.
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  41. Park Hee Kook,KRX, Method for fabricating semiconductor device.
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  42. Morimoto Hiroaki (Itami JPX) Onoda Hiroshi (Itami JPX), Method of controlling etching with a focused charged beam by detecting electrical current or secondary electrons.
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  43. Yamaguchi Hiroshi (Fujisawa JPX) Saito Keiya (Yokohama JPX) Itoh Fumikazu (Fujisawa JPX) Ishida Koji (Musashino JPX) Sakano Shinji (Hachiouji JPX) Tamura Masao (Tokorozawa JPX) Shukuri Shoji (Koganei, Method of manufacturing devices having superlattice structures.
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  44. Tonosaki Minehiro,JPX ; Ueda Mitsunori,JPX ; Kobayashi Masato,JPX ; Okita Hiroyuki,JPX, Method of modifying a surface of an insulator.
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  45. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  46. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  47. Chen, Jian; Cruden, Karen Chu; Duan, Xiangfeng; Liu, Chao; Parce, J. Wallace, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  48. Chen, Jian; Duan, Xiangfeng; Liu, Chao; Nallabolu, Madhuri; Parce, J. Wallace; Ranganathan, Srikanth, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  49. Chen, Jian; Duan, Xiangfeng; Liu, Chao; Nallabolu, Madhuri; Parce, J. Wallace; Ranganathan, Srikanth, Methods and devices for forming nanostructure monolayers and devices including such monolayers.
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  50. Leon, Francisco; Lemmi, Francesco; Miller, Jeffrey; Dutton, David; Stumbo, David P., Methods for formation of substrate elements.
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  51. Hartlove, Jason; Barr, Ronald; Dubrow, Robert S., Methods of generating liquidphobic surfaces.
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  52. Sakai Katsuhiko (Katsuta JPX), Particle beam irradiating apparatus having charge suppressing device which applies a bias voltage between a change suppr.
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  54. Azuma Junzou,JPX ; Shimase Akira,JPX ; Hamamura Yuichi,JPX ; Koike Hidemi,JPX, Pattern forming method using charged particle beam process and charged particle beam processing system.
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  55. Junzou Azuma JP; Akira Shimase JP; Yuichi Hamamura JP; Hidemi Koike JP, Pattern forming method using charged particle beam process and charged particle beam processing system.
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  56. Keith C. Stevens, Reduction of induced charge in SOI devices during focused ion beam processing.
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  57. Shichi, Hiroyasu; Fukuda, Muneyuki; Sekihara, Isamu; Tomimatsu, Satoshi; Umemura, Kaoru, Refilling method by ion beam, instrument for fabrication and observation by ion beam, and manufacturing method of electronic device.
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  58. Ward,Billy W., Scanning transmission ion microscope.
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  59. Laprade Bruce N. (Holland MA), Simultaneous positive and negative ion detector.
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  60. Schmidt, Michael; Blackwood, Jeff, Sputtering coating of protective layer for charged particle beam processing.
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  61. David Alan Baldwin ; Todd Lanier Hylton, System and method for performing sputter deposition using independent ion and electron sources and a target biased with an a-symmetric bi-polar DC pulse signal.
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  62. Baldwin, David Alan; Hylton, Todd Lanier, System and method for performing sputter deposition with multiple targets using independent ion and electron sources and independent target biasing with DC pulse signals.
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  63. Ward, Billy W.; Farkas, Lou; Notte, John A.; Percival, Randall, Systems and methods for a gas field ionization source.
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  64. Libby Charles J. ; Yansen Donald E. ; Athas Gregory J. ; Hill Raymond ; Mello Russell, Thin film magnetic recording heads and systems and methods for manufacturing the same.
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  65. Lee,Randall Grafton; Libby,Charles J., Thin-film magnetic recording head manufacture.
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  66. Lee Randall Grafton ; Libby Charles J., Thin-film magnetic recording head manufacturing method.
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  67. Gerlach, Robert L.; Utlaut, Mark W., Through-the-lens neutralization for charged particle beam system.
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  68. Ward,Billy W., Transmission ion microscope.
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  69. Chutjian Ara (La Crescenta CA), Trochoidal analysis of scattered electrons in a merged electron-ion beam geometry.
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