초록 ▼

For improving the dynamic characteristics of semiconductor components required to absorb high reverse voltages only in one polarity (diodes, reverse-conducting thyristors and asymmetric thyristors), in many cases structures having an n base consisting of two layers are used. In order to improve the

For improving the dynamic characteristics of semiconductor components required to absorb high reverse voltages only in one polarity (diodes, reverse-conducting thyristors and asymmetric thyristors), in many cases structures having an n base consisting of two layers are used. In order to improve the reverse-voltage capability, it is proposed, in a semiconductor component having at least one pn-n sequence of layers, to select the thickness (S) and the doping of an n stop layer (4) in such a way that the following applies: [Figure] where e=elementary charge, eD=donor concentration, X=path coordinate, 0.8≤k≤1.0 and En=field strength at the n-n junction. The effect of this measure is that the geometric conditions of the edge chamfering are less stringent. The edge can also be shaped by means of conventional etching processes.

대표청구항 ▼

A semiconductor device having a blocking capbility in only one direction, comprisng: an anode; a cathode; a plurality of differently doped layers stacked along a main axis between said anode and said cathode, said doped layers including, a first highly doped p+layer provided aside said anode, a seco

A semiconductor device having a blocking capbility in only one direction, comprisng: an anode; a cathode; a plurality of differently doped layers stacked along a main axis between said anode and said cathode, said doped layers including, a first highly doped p+layer provided aside said anode, a second highly doped n+layer provided aside said cathode, a third layer with a low-level n-doping provided between said first and second layers, a fourth n-doped stopping layer with a doping concentration lying in between the doping concentrations of said second and third layers provided adjoining said third layer on one side, wherein said stopping layer has a thickness S and a number of donor atoms selected so as to satisfy the equation: [Figure] with e=elementary charge eD=donor concentration in said stopping layer (in cm-3), x=path coordinate of an integration path parallel to said main axis of said device (in cm), k=numerical constant with 0.8≤K≤1.0, En=electrical field strength at the junction between said third and fourth layers at the breakdown voltage of said device; and a recess provided at the edge of said stopping layer.