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[미국특허] Magnetron-enhanced plasma etching process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/306
  • B44C-001/22
  • C03C-015/00
  • C03C-025/06
출원번호 US-0814638 (1985-12-30)
발명자 / 주소
  • Maydan Dan (Los Altos Hills CA) Somekh Sasson (Redwood City CA) Cheng Mei (San Jose CA) Cheng David (San Jose CA)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 58  인용 특허 : 4

초록 ▼

A magnetically-enhanced, variable magnetic field, RIE mode plasma etch process for etching materials such as dielectrics and polycrystalline, is disclosed. The variable magnetic field permits optimization of selected characteristics such as etch rate, etch selectivity, ion bombardment and radiation

대표청구항 ▼

A method for continuously etching in a closed chamber a structure comprising at least one of a dielectric layer and a semiconductor layer formed on or over a surface of a substrate, comprising: communicating into said chamber a selected reactive gas mixture; supplying RF electrical energy to said ch

이 특허에 인용된 특허 (4) 인용/피인용 타임라인 분석

  1. Okano Haruo (Yokohama JPX) Horiike Yasuhiro (Tokyo JPX), Dry Etching method and device therefor.
    상세보기
  2. Class Walter H. (Yonkers NY) Hurwitt Steven D. (Park Ridge NJ) Hill Michael L. (New York NY) Hutt Marvin K. (Oakland NJ), Magnetically enhanced plasma process and apparatus.
    상세보기
  3. Thornton ; John A., Method and apparatus for sputter cleaning and bias sputtering.
    상세보기
  4. Keith Douglas L. (Santa Clara CA), Planar magnetron sputtering apparatus.
    상세보기

이 특허를 인용한 특허 (58) 인용/피인용 타임라인 분석

  1. Satitpunwaycha Peter ; Yao Gongda ; Ngan Kenny King-Tai ; Xu Zheng, Aluminum hole filling method using ionized metal adhesion layer.
    상세보기
  2. Yan,Hongwen; Ji,Brian L.; Panda,Siddhartha; Wise,Richard; Chen,Bomy A., Apparatus and method for shielding a wafer from charged particles during plasma etching.
    상세보기
  3. McLeod Paul Stephen ; Bruno John, Apparatus for etching discs and pallets prior to sputter deposition.
    상세보기
  4. Xu Zheng ; Forster John ; Yao Tse-Yong, Apparatus for filling apertures in a film layer on a semiconductor substrate.
    상세보기
  5. Khan, Anisul; Kumar, Ajay; Chinn, Jeffrey D.; Podlesnik, Dragan, Apparatus for performing self cleaning method of forming deep trenches in silicon substrates.
    상세보기
  6. Wong Jerry Yuen Kui ; Wang David Nin-Kou ; Chang Mei ; Mak Alfred W. ; Maydan Dan, Bomine and iodine etch process for silicon and silicides.
    상세보기
  7. Wong Jerry Yuen-Kui ; Wang David Nin-Kou ; Chang Mei ; Mak Alfred W. S. ; Maydan Dan, Bromine and iodine etch process for silicon and silicides.
    상세보기
  8. Joseph, Eric A.; Abraham, David W.; Cheek, Roger W.; Schrott, Alejandro G.; Zhang, Ying, Catalytic etch with magnetic direction control.
    상세보기
  9. Coronel Phillipe,FRX ; Maccagnan Renzo,FRX, Collar etch method to improve polysilicon strap integrity in DRAM chips.
    상세보기
  10. Sekine Makoto (Yokohama JPX) Okano Haruo (Tokyo JPX) Horiike Yasuhiro (Tokyo JPX), Dry etching process.
    상세보기
  11. Kinoshita Haruhisa (Tokyo JPX), Dry process apparatus.
    상세보기
  12. Akiba, Fuminori, Electrostatic chuck cleaning method.
    상세보기
  13. Akiba,Fuminori, Electrostatic chuck cleaning method.
    상세보기
  14. Autryve Luc Van,FRX, Etch process for forming contacts over titanium silicide.
    상세보기
  15. Xu Zheng ; Forster John ; Yao Tse-Yong ; Nulman Jaim ; Chen Fusen, Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer.
    상세보기
  16. Satitpunwaycha Peter ; Yao Gongda ; Ngan Kenny King-Tai ; Xu Zheng, Integrated PVD system for aluminum hole filling using ionized metal adhesion layer.
    상세보기
  17. Keeble Frank (Littleton-upon-Severn GB3), Ion etching and chemical vapour deposition.
    상세보기
  18. Fu Jianming, Ionized PVD source to produce uniform low-particle deposition.
    상세보기
  19. Shan Hongching ; Lindley Roger ; Bjorkman Claes ; Qian Xue Yu ; Plavidal Richard ; Pu Bryan ; Ding Ji ; Li Zongyu ; Ke Kuang-Han ; Welch Michael, Magnetically-enhanced plasma chamber with non-uniform magnetic field.
    상세보기
  20. Ding, Peijun; Xu, Zheng; Zhang, Hong; Tang, Xianmin; Gopalraja, Praburam; Rengarajan, Suraj; Forster, John C.; Fu, Jianming; Chiang, Tony; Yao, Gongda; Chen, Fusen E.; Chin, Barry L.; Kohara, Gene Y., Metal / metal nitride barrier layer for semiconductor device applications.
    상세보기
  21. Horioka,Keiji; Yan,Chun; Shin,Taeho; Lindley,Roger Alan; Li,Qi; Hughes,Panyin; Burns,Douglas H.; Lee,Evans Y.; Pu,Bryan Y., Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber.
    상세보기
  22. Rueger,Neal, Method and apparatus for micromachining using a magnetic field and plasma etching.
    상세보기
  23. Ogle John S. (Milpitas CA), Method and apparatus for producing magnetically-coupled planar plasma.
    상세보기
  24. Horioka,Keiji; Yan,Chun; Shin,Taeho; Lindley,Roger Alan; Hughes,Panyin; Burns,Douglas H.; Lee,Evans Y.; Pu,Bryan Y.; Li,Qi; Dahimene,Mahmoud, Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor.
    상세보기
  25. Lindley, Roger Alan; Liu, Jingbao; Pu, Bryan Y.; Horioka, Keiji, Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor.
    상세보기
  26. Lindley, Roger Alan; Liu, Jingbao; Pu, Bryan Y.; Horioka, Keiji, Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor.
    상세보기
  27. Lindley,Roger Alan; Liu,Jingbao; Pu,Bryan Y.; Horioka,Keiji, Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor.
    상세보기
  28. Chiang, Tony; Yao, Gongda; Ding, Peijun; Chen, Fusen E.; Chin, Barry L.; Kohara, Gene Y.; Xu, Zheng; Zhang, Hong, Method for depositing a diffusion barrier layer and a metal conductive layer.
    상세보기
  29. Jitske Trevor ; Shashank Deshmukh ; Jeff Chinn, Method for etching polysilicon to have a smooth surface.
    상세보기
  30. Schmitt Jacques (La Ville du Bois FRX) Muralt Paul-Rene (Sarraz CHX), Method for improving the rate of a plasma enhanced vacuum treatment.
    상세보기
  31. Xu Zheng ; Forster John ; Yao Tse-Yong, Method for low thermal budget metal filling and planarization of contacts vias and trenches.
    상세보기
  32. Chiang,Tony; Yao,Gongda; Ding,Peijun; Chen,Fusen E.; Chin,Barry L.; Kohara,Gene Y.; Xu,Zheng; Zhang,Hong, Method of depositing a metal seed layer on semiconductor substrates.
    상세보기
  33. Chiang,Tony; Yao,Gongda; Ding,Peijun; Chen,Fusen E.; Chin,Barry L.; Kohara,Gene Y.; Xu,Zheng; Zhang,Hong, Method of depositing a metal seed layer on semiconductor substrates.
    상세보기
  34. Ding,Peijun; Xu,Zheng; Zhang,Hong; Tang,Xianmin; Gopalraja,Praburam; Rengarajan,Suraj; Forster,John C.; Fu,Jianming; Chiang,Tony; Yao,Gongda; Chen,Fusen E.; Chin,Barry L.; Kohara,Gene Y., Method of depositing a tantalum nitride/tantalum diffusion barrier layer system.
    상세보기
  35. Ku San-Mei (3 Carnelli Ct. Poughkeepsie NY 12603) Perry Kathleen A. (22120 Viscanio Rd. Woodland Hills CA 91364), Method of forming contacts to a semiconductor device.
    상세보기
  36. Usami Tatsuya,JPX ; Miyamoto Hidenobu,JPX, Method of manufacturing semiconductor device with via holes reaching interconnect layers having different top-surface widths.
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  37. Kutney, Michael C.; Hoffman, Daniel J.; Delgadino, Gerardo A.; Gold, Ezra R.; Sinha, Ashok; Zhao, Xiaoye; Burns, Douglas H.; Ma, Shawming, Methods to avoid unstable plasma states during a process transition.
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  38. Michael J. Teixeira ; Mike Devre ; Wade Dawson ; Dave Johnson, Morphed processing of semiconductor devices.
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  39. Sato Masaaki (Kanagawa JPX) Arita Yoshinobu (Kanagawa JPX), Plasma etching apparatus.
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  40. Chan-lon Yang ; Usha Raghuram ; Kimberley A. Kaufman ; Daniel Arnzen ; James Nulty, Plasma etching method.
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  41. Yang Chan-lon ; Raghuram Usha ; Kaufman Kimberley A. ; Arnzen Daniel ; Nulty James, Plasma etching method.
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  42. Kishimoto, Katsushi; Fukuoka, Yusuke, Plasma processing apparatus and semiconductor device manufactured by the same apparatus.
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  43. Koshimizu Chishio,JPX, Plasma processing apparatus comprising a compensating-process-gas supply means in synchronism with a rotating magnetic f.
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  44. Hijikata Isamu (Kanagawa JPX) Uehara Akira (Kanagawa JPX), Plasma reactor.
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  45. Hoffman, Daniel J.; Lindley, Roger A.; Kutney, Michael C.; Salinas, Martin J.; Tavassoli, Hamid F.; Horioka, Keiji; Buchberger, Jr., Douglas A., Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction.
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  46. Kubota Masafumi (Osaka JPX) Nomura Noboru (Kyoto JPX) Tamaki Tokuhiko (Sakai JPX), Plasma source for etching.
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  47. Groechel David W. (Sunnyvale CA) Taylor Brad (Seattle WA) Henri John R. (Los Altos CA) Obinata Naomi (Mountain View CA), Process for RIE etching silicon dioxide.
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  48. Maher Joseph A. (South Hamilton MA) Vowles E. John (Goffstown NH) Napoli Joseph D. (Winham NH) Zafiropoulo Arthur W. (Manchester MA) Miller Mark W. (Burlington MA), Quad processor.
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  49. Radens Carl J. ; Fairchok Cynthia A., Selective oxide-to-nitride etch process using C.sub.4 F.sub.8 /CO/Ar.
    상세보기
  50. Xu Zheng ; Forster John ; Yao Tse-Yong, Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches.
    상세보기
  51. McNeilly Michael A. (Palo Alto CA), Semiconductor wafer processing apparatus.
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  52. Coolbaugh, Douglas D.; Johnson, Jeffrey B.; Lindgren, Peter J.; Lie, Xuefeng; Nakos, James S.; Omer, Bradley A.; Rassel, Robert M.; Sheridan, David C., Silicided trench contact to buried conductive layer.
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  53. Coolbaugh, Douglas D.; Johnson, Jeffrey B.; Lindgren, Peter J.; Liu, Xuefeng; Nakos, James S.; Orner, Bradley A.; Rassel, Robert M.; Sheridan, David C., Silicided trench contact to buried conductive layer.
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  54. Matthews, Mehlin Dean, System and method for isotope selective chemical reactions.
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  55. Maher Joseph A. ; Vowles E. John ; Napoli Joseph D. ; Zafiropoulo Arthur W. ; Miller Mark W., System for processing substrates.
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  56. Fukui, Kazuyuki; Inagaki, Katsutoshi; Hosokawa, Masao, Transformer.
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  57. Fu, Jianming, Transverse magnetic field for ionized sputter deposition.
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  58. Bjorkman,Claes H., Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils.
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