초록 ▼

A process for fabricating layered semiconductor structures, particularly thin gallium arsenide solar cells, on reusable substrates. The structure is fabricated by depositing a selectively removable layer such as gallium aluminum arsenide onto a substrate, and then depositing a solar cell basic struc

A process for fabricating layered semiconductor structures, particularly thin gallium arsenide solar cells, on reusable substrates. The structure is fabricated by depositing a selectively removable layer such as gallium aluminum arsenide onto a substrate, and then depositing a solar cell basic structure on the selectively removable layer. Preferably, the solar cell basic structure includes a layer of p-type gallium arsenide on the layer of gallium aluminum arsenide, a layer of n-type gallium arsenide on the p-type gallium arsenide, and a transparent glass cover over the n-type gallium arsenide layer. The solar cell basic structure is separated from the substrate by selectively dissolving the gallium aluminum arsenide layer, and a new layer of gallium aluminum arsenide is epitaxially deposited upon the exposed face to form a thin, lightweight gallium arsenide solar cell. If the layer of p-type gallium arsenide is about 0.5 microns thick or less, the new layer of gallium aluminum arsenide may be omitted. The separated substrate can then be reused.

대표청구항 ▼

A solar cell, comprising: a layer of p-type gallium arsenide haviang a thickness of not greater than about 0.5 micrometers; a layer of n-type gallium arsenide, said layer of p-type gallium arsenide and the layer of n-type gallium arsenide together constituting an active semiconductor solar cell; a g

A solar cell, comprising: a layer of p-type gallium arsenide haviang a thickness of not greater than about 0.5 micrometers; a layer of n-type gallium arsenide, said layer of p-type gallium arsenide and the layer of n-type gallium arsenide together constituting an active semiconductor solar cell; a glass cover in contact with said active semiconductor solar cell, said solar cell having no charge recombination inhibitory layer in contact with said layer of p-type gallium arsenide.