[특허]Dual detector system for determining endpoint of plasma etch process

[미국특허] Dual detector system for determining endpoint of plasma etch process 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	B23K-015/00
출원번호	US-0663903 (1984-10-22)
발명자 / 주소	Provence John D. (Mesquite TX) Brown Frederick W. (Colleyville TX) Jones John I. (Plano TX)
출원인 / 주소	Texas Instruments Incorporated (Dallas TX 02)
인용정보	피인용 횟수 : 44 인용 특허 : 7

초록

A dual detector spectroscopic endpoint determination system is used which has dual channels that enables the combination of channels to increase gain, cancel out background noise, and to use either one or more spectroscopic channels.

대표청구항 ▼

An apparatus for the manufacturing of semiconductor devices from semiconductor wafers having a plurality of semiconductor circuit patterns on at least a first surface of the semiconductor wafer, the apparatus comprises: first means for providing a stream of reacting gases to react with the semiconductor wafer to create circuit elements according to the semiconductor circuit pattern thereby; second means for handling the wafers and includes a third means for bringing the wafers into contact with the reacting gas, fourth means for degassing of the semiconductor wafers, fifth means for preventing the contamination of the third means and to provide a port for the transfer of the semiconductor wafers from the fourth means to the third means; sixth means for isolating the semiconductor wafers and the circuit elements from the third means, seventh means for providing a port for the transfer of the semiconductor wafer between the third means and the sixth means, and eighth means for transferring the semiconductor wafer from the fourth means to the third means and from the third means to the sixth means; and twenty-fifth means for detecting when the etching performed by the reacting gases has reached a predetermined depth in the semiconductor wafer, wherein the twenty-fifth means further comprises: twenty-seventh means for illuminating the first surface of the semiconductor wafers; and twenty-eighth means for detecting reflected lights when reflected from trace materials in the reacting gases, said trace materials being released from the semiconductor wafer during etching by the reacting gases, wherein the twenty-eighth means comprises: first detector means for detecting the reflected light; second detector means for detecting the reflected light; and twenty-ninth means for comparing the output of the first detector means to the output of the second detector means.

이 특허에 인용된 특허 (7) 인용/피인용 타임라인 분석

Uehara Akira (Yokohama JPX) Kiyota Hiroyuki (Hiratsuka JPX) Miyazaki Shigekazu (Sagamihara JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for automatic semi-batch sheet treatment of semiconductor wafers by plasma reaction.
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Hijikata Isamu (Tokyo JPX) Uehara Akira (Yokohama JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for the treatment of semiconductor wafers by plasma reaction.
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Uehara Akira (Yokohama JPX) Nakane Hisashi (Kawasaki JPX), Apparatus for the treatment of wafer materials by plasma reaction.
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Yoneda Masahiro (Itami JPX) Hine Shiro (Minoh JPX) Koyama Hiroshi (Amagasaki JPX), Cleaning device for a plasma etching system.
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Yamamoto Shinichi (Yokohama JPX) Sumitomo Yasusuke (Yokohama JPX) Horiike Yasuhiro (Tokyo JPX) Shibagaki Masahiro (Hiratsuka JPX), Continuous gas plasma etching apparatus.
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Poulsen Robert G. (Ottawa CAX) Smith Gerald M. (Ottawa CAX) Westwood William D. (Ottawa CAX), End point control in plasma etching.
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Yamazaki Takashi (Kawasaki JPX), Plasma etching apparatus.
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이 특허를 인용한 특허 (44) 인용/피인용 타임라인 분석

Patel,Satyadev R.; Schaadt,Gregory P.; MacDonald,Douglas B.; MacDonald,Niles K.; Shi,Hongqin, Apparatus and method for detecting an endpoint in a vapor phase etch.
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Patel, Satyadev R.; Schaadt, Gregory P.; MacDonald, Douglas B.; MacDonald, Niles K., Apparatus and method for flow of process gas in an ultra-clean environment.
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Shanmugasundram, Arulkumar; Birang, Manoocher; Pancham, Ian A.; Lopatin, Sergey, Apparatus and method of detecting the electroless deposition endpoint.
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Sugimoto Kenji (Kyoto JPX), Apparatus for treating the surfaces of wafers.
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Jonathan Frankel ; Visweswaren Sivaramakrishnan, Chamber liner for high temperature processing chamber.
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Ueda Hiroyuki,JPX ; Tanabe Hirotaka,JPX ; Okubo Makoto,JPX ; Chandran Shankar ; Yieh Ellie, Cleaning process end point determination using throttle valve position.
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Yu-Chong Tai ; Xuan-Oi Wang, Gas phase silicon etching with bromine trifluoride.
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Tai Yu-Chong ; Wang Xuan-Oi, Gas-phase silicon etching with bromine trifluoride.
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Yokogawa, Ken'etsu; Miyake, Masatoshi, Heat treatment apparatus that performs defect repair annealing.
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Frankel, Jonathan; Ponnekanti, Hari; Shmurun, Inna; Sivaramakrishnan, Visweswaren, Heater/lift assembly for high temperature processing chamber.
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Janos, Alan; Saubhayana, Montien, In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction.
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Reza Golzarian, Liquid etch endpoint detection and process metrology.
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Raoux,S챕bastien; Mudholkar,Mandar; Taylor,William N., Method and apparatus for monitoring and adjusting chamber impedance.
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Qingyan Han ; Palani Sakthivel ; Ricky Ruffin ; Andre Cardoso, Method for detecting an endpoint for an oxygen free plasma process.
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Wang David Nin-Kou ; White John M. ; Law Kam S. ; Leung Cissy ; Umotoy Salvador P. ; Collins Kenneth S. ; Adamik John A. ; Perlov Ilya ; Maydan Dan, Method for protecting against deposition on a selected region of a substrate.
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Yamazaki, Shunpei, Method for the manufacture of an insulated gate field effect semiconductor device.
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Patel,Satyadev R.; Schaadt,Gregory P.; MacDonald,Douglas B.; Shi,Hongqin; Huibers,Andrew G.; Heureux,Peter, Method for vapor phase etching of silicon.
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Shi, Hongqin; Schaadt, Gregory P., Methods and apparatus of etch process control in fabrications of microstructures.
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Janos, Alan C.; Cardoso, Andre G.; Richardson, Daniel B., Optimized optical system design for endpoint detection.
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Raoux Sebastien ; Mudholkar Mandar, Use of an asymmetric waveform to control ion bombardment during substrate processing.
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[미국특허] Dual detector system for determining endpoint of plasma etch process 원문보기

초록

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이 특허에 인용된 특허 (7) 인용/피인용 타임라인 분석

이 특허를 인용한 특허 (44) 인용/피인용 타임라인 분석

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[미국특허] Dual detector system for determining endpoint of plasma etch process 원문보기

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이 특허에 인용된 특허 (7) 인용/피인용 타임라인 분석

이 특허를 인용한 특허 (44) 인용/피인용 타임라인 분석

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