초록 ▼

A high pressure furnace and reusable demountable containment means for selective in situ information of epitaxial layers on a semiconductor substrate while under gas overpressure. The containment means has vent means therein for allowing the inert and reducing or reactive gases in an inner chamber o

A high pressure furnace and reusable demountable containment means for selective in situ information of epitaxial layers on a semiconductor substrate while under gas overpressure. The containment means has vent means therein for allowing the inert and reducing or reactive gases in an inner chamber of the furnace to enter into the interior of the containment means to equalize pressures on each side of the housing and to semi-confine the vapor from the epitaxial growth source materials in the interior of the containment means. The containment means has a removable, i.e. demountable, form-fittedly sealed plug which is removed to insert the substrate and growth source elements, which are mounted in a close-space relationship on a support structure, therein. The support structure is inserted back into the containment means and the plug is form fittedly sealed thereto for performing the epitaxial layering.

대표청구항 ▼

An apparatus for close-space epitaxial layering in a gas overpressure environment comprising: a high temperature high pressure furnace having an inner chamber made of ceramic material surrounded by insulation material and high pressure resistant metal which are resistant to reaction with materials a

An apparatus for close-space epitaxial layering in a gas overpressure environment comprising: a high temperature high pressure furnace having an inner chamber made of ceramic material surrounded by insulation material and high pressure resistant metal which are resistant to reaction with materials and gases used in epitaxial layering process; gas flow and pressure control gas feed line means for allowing selective high pressure inert and reducing gases and/or reactive gases to flow therethrough for pressurizing and purging said inner chamber throughout the entire epitaxial process; and a reusable demountable containment means having pressure equalizing vent means in which epitaxial layering processes can be repeatedly performed in a semi-confinement high temperature high gas overpressure environment within said containment means wherein said containment means has a substrate and growth source material therein in close-space area and containment means is positioned within said inner chamber of said furnace during said epitaxial layering process wherein said selective gases are supplied to the interior of said containment means through said pressure equalizing vent means to confine said growth source material flow to said close-space area.