초록 ▼

In wafer-scale-integrated assemblies, microminiature transmission lines are utilized as interconnects on the wafer. The extremely small cross-sectional area of a typical such line results in its total line resistance being relatively large. Such a line exhibits signal reflections and resonances. In

In wafer-scale-integrated assemblies, microminiature transmission lines are utilized as interconnects on the wafer. The extremely small cross-sectional area of a typical such line results in its total line resistance being relatively large. Such a line exhibits signal reflections and resonances. In practice, it is not feasible to eliminate these effects by conventional load termination techniques. As a result, the frequency at which digital signals can be transmitted over such a line is typically limited to well below its so-called resonance limit. In accordance with a feature of the invention, the structural parameters of each line are selected to meet specified design criteria that ensure optimal high-frequency performance of the line.

대표청구항 ▼

A wafer-scale-integrated assembly comprising a substrate having a top surface, a ground plane overlying the top surface of said substrate, a dielectric layer overlying said ground plane, and a plurality of lossy interconnect lines on said dielectric layer, said lines having respective input ends and

A wafer-scale-integrated assembly comprising a substrate having a top surface, a ground plane overlying the top surface of said substrate, a dielectric layer overlying said ground plane, and a plurality of lossy interconnect lines on said dielectric layer, said lines having respective input ends and including a maximum-length line and a line that is shorter than said maximum-length line, the width of said maximum-length line being greater than the width of said shorter line and active drivers respectively connected to the input ends of said lines.