초록 ▼

A method of manufacturing a semiconductor device. An insulation film having an opening is formed on a semiconductor substrate. The opening is filled with an electrically conductive material so as to substantially flatten the top surface of the opening filled with an electrically conductive material,

A method of manufacturing a semiconductor device. An insulation film having an opening is formed on a semiconductor substrate. The opening is filled with an electrically conductive material so as to substantially flatten the top surface of the opening filled with an electrically conductive material, an intermediate layer of an electrically conductive material having a greater allowable current density than that of a wiring layer to be formed thereon is formed so as to cover at least their surface of the electrically condictive material deposited in the opening. Subsequently, the wiring layer is formed so as to extend from the surface of the intermediate layer onto the surface of the insulation film. A semiconductor device incorporating the wiring layer having an extremely high reliability can be easily realized.

대표청구항 ▼

A method of manufacturing a semiconductor device, comprising steps of: forming an insulation film having an opening on a semiconductor substrate; filling said opening with an electrically conductive material so as to substantially flatten the top end face of the filled opening; forming an intermedia

A method of manufacturing a semiconductor device, comprising steps of: forming an insulation film having an opening on a semiconductor substrate; filling said opening with an electrically conductive material so as to substantially flatten the top end face of the filled opening; forming an intermediate layer of an electrically conductive material having a greater allowable current density than that of a wiring layer, said intermediate layer having a greater area than that of said opening so as to cover at least the surface of said electrically conductive material filling said opening; and forming said wiring layer which extends from said intermediate layer onto said insulation film.