초록 ▼

A Femto Diode responsive to light frequencies, is described. Quantum principles are utilized. The Femto Diode comprises a submicron metal cylinder with an assymetric metal-insulator-metal tunnel junction at one end and a reflecting potential step at the other end. A light photon having a quanta of e

A Femto Diode responsive to light frequencies, is described. Quantum principles are utilized. The Femto Diode comprises a submicron metal cylinder with an assymetric metal-insulator-metal tunnel junction at one end and a reflecting potential step at the other end. A light photon having a quanta of energy is absorbed by an electron in the cylinder producing an energetic electron. The cylinder acts as a potential well for the energetic electron, which travels back and forth in its own conduction band without loss of energy until it passes through the junction. The kinetic energy of the energetic electron is converted to electric energy at a greater voltage on the other side of the junction. The energy conversion is reversible. The Femto Diode may be used in light to electric power conversion, a laser which converts electric power to light power, 2D and 3D displays, high speed computers, communications and other devices.

대표청구항 ▼

In a submicron diode well structure for the interchange of photon energy and electron energy, a first cylinder comprising a first metal, a second cylinder comprising a second metal, an insulating substrate, a surface on said substrate, said cylinders having a common axis parallel to said surface, sa

In a submicron diode well structure for the interchange of photon energy and electron energy, a first cylinder comprising a first metal, a second cylinder comprising a second metal, an insulating substrate, a surface on said substrate, said cylinders having a common axis parallel to said surface, said cylinders being deposited on said surface, said first and second metals having the work functions f1 and f2 respectively, first and second plane faces normal to said axis on adjacent ends of said first and second cylinders respectively, said faces being separated by a gap of distance s, an insulating layer in said gap, means for producing an energetic first electron in said first cylinder travelling along said axis, said insulating layer and said first and second metals on said cylinder faces providing an assymetric tunnelling barrier for said energetic electron, a third plane on said first cylinder normal to said comon axis and opposite said first plane, said third plane providing a potential barrier for reflecting said energetic electron, the space in said first cylinder between said first and third planes constituting a potential well for said energetic first electron, first and second terminals, said first and second terminals being connected to said first and second cylinders respectively, said energetic first electron moving back and forth along said axis in said potential well and eventually passing unidirectionally through said barrier from said first cylinder to said second cylinder and to said second terminal, a second electron, said second electron passing from said first terminal into said first cylinder to replace said first electron.