초록 ▼

An improved apparatus for annealing an ion-implanted semiconductor sample reduces the deleterious side effects otherwise associated with the process. A semiconductor sample, fabricated, for example, from indium phosphide or gallium arsenide, is set upon the fingers of a carrier which is displaced to

An improved apparatus for annealing an ion-implanted semiconductor sample reduces the deleterious side effects otherwise associated with the process. A semiconductor sample, fabricated, for example, from indium phosphide or gallium arsenide, is set upon the fingers of a carrier which is displaced to the interior of an elongate furnace having its internal temperature maintained at the proper annealing temperature. Next, the fingers are rotated and the sample is placed on a number of razor blade-like edges extending up from an internal rack. The carrier is withdrawn and the sample is quickly brought to the annealing temperature for the precise period of time usually no more than 20 seconds. After the exact annealing period, the carrier is reintroduced and the fingers are rotated to lift the sample from the rack and the sample is withdrawn. Since only the sample is brought within the furnace and is placed on the preheated rack, it is immediately brought to the proper annealing temperature for the precise annealing duration that is ended by the immediate withdrawal of the sample from the furnace on the moveable carrier. Since the furnace, carrier and rack are in sealed enclosure, a non-oxidizing gas is provided to prevent oxidation and related degradation of the materials of the sample.

대표청구항 ▼

An apparatus for annealing a semiconductor sample at a precise temperature for a specific duration comprising: means stationary mounted for inductively heating a contained volume to the precise temperature; means extending through the heated contained volume of the inductively heated means enclosing

An apparatus for annealing a semiconductor sample at a precise temperature for a specific duration comprising: means stationary mounted for inductively heating a contained volume to the precise temperature; means extending through the heated contained volume of the inductively heated means enclosing a chamber therein; a thin edged support rack disposed in the enclosed chamber; means disposed adjacent said enclosed chamber for selectively extending therein in a moveable relationship with respect to the stationary mounted inductively heating means; means connected to the selectively extending means and in sealing isolation with the enclosed chamber having fingers pivotable about the thin edged support rack for carrying the semiconductor sample thereon; and means disposed within the selectively extending means for rotating the pivotable fingers of the carrying means upward as the selectively extending means brings the semiconductor sample to the thin edged support rack and for rotating the pivotable fingers downward when the fingers coextend with the thin edged support rack to deposit the semiconductor sample theron for the annealing thereof for the specific duration and the withdrawal of the selectively extending means and carrying means.