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Particulate-free epitaxial process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-023/06
  • C30B-025/10
  • B08B-003/12
  • B32B-003/02
출원번호 US-0735556 (1985-05-20)
발명자 / 주소
  • Logar Roger E. (San Jose CA)
출원인 / 주소
  • Applied Materials, Inc. (Santa Clara CA 02)
인용정보 피인용 횟수 : 33  인용 특허 : 0

초록

Particles and particle-generated defects during epitaxial deposition are substantially decreased by the process of controlling the various particle transport mechanisms, such as, for example, by applying low level radiant energy during cold purge cycles in barrel reactors.

대표청구항

In a cold purge process for preparing a reactor chamber for the gas phase formation of an epitaxial layer on a wafer positioned within the reactor chamber by communicating a flow of conditioning gas into the reactor chamber, the reactor chamber system including radiant energy lamp means for heating

이 특허를 인용한 특허 (33)

  1. McDiarmid James ; Johnsgard Kristian E. ; Parks Steven E. ; Johnsgard Mark W., Apparatus and method for CVD and thermal processing of semiconductor substrates.
  2. Dunn, Frank J., Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor.
  3. Doran Daniel B., Automated washing method.
  4. Diel Bruce, Compounds for use as chemical vapor deposition precursors, thermochromic materials light-emitting diodes, and molecular charge-transfer salts and methods of making these compounds.
  5. Roberson ; Jr. Glenn A. (Hollister CA) Genco Robert M. (Atlanta GA) Mundt G. Kyle (Duluth GA), Docking and environmental purging system for integrated circuit wafer transport assemblies.
  6. Roberson ; Jr. Glenn A. ; Genco Robert M. ; Mundt G. Kyle, Docking and environmental purging system for integrated circuit wafer transport assemblies.
  7. Roberson ; Jr. Glenn A. ; Genco Robert M. ; Mundt G. Kyle, Docking and environmental purging system for integrated circuit wafer transport assemblies.
  8. Hellwig, Lance G.; Kommu, Srikanth; Pitney, John A., Epitaxial barrel susceptor having improved thickness uniformity.
  9. Goto Haruhiro ; Wong Jerry Yuen-Jui ; Fujimoto Junichi, Method and apparatus for etching film layers on large substrates.
  10. Robert C. Cook ; Daniel L. Brors, Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors.
  11. Paranjpe,Ajit P., Method and apparatus for layer by layer deposition of thin films.
  12. Habuka Hitoshi,JPX ; Mayuzumi Masanori,JPX ; Tate Naoto ; Katayama Masatake,JPX, Method and apparatus for thin film growth.
  13. Yen, Fu-Cheng; Yang, Tsung-Mu; Liu, Sheng-Hsu; Wang, Tsang-Hsuan; Kuo, Chun-Liang; Hsu, Yu-Ming; Tsai, Chung-Min; Chen, Yi-Wei, Method for fabricating semiconductor device.
  14. Glew Alexander D. ; Johnson Andrew D. ; Rajagopalan Ravi ; Ghanayem Steve, Method for high rate deposition of tungsten.
  15. Klebanoff Leonard E. ; Rader Daniel J., Method for protection of lithographic components from particle contamination.
  16. Hanley Thomas Martin, Method for tuning barrel reactor purge system.
  17. Watanabe Masataka,JPX ; Kaise Tsuneyuki,JPX ; Shinohara Masayuki,JPX ; Endo Masahisa,JPX, Method for vapor-phase growth.
  18. Van Bilsen Franciscus Bernardus Maria ; Layton Jason Mathew ; Raaijmakers Ivo, Method of processing wafers with low mass support.
  19. Van Bilsen Franciscus Bernardus Maria ; Layton Jason Mathew ; Raaijmakers Ivo, Method of processing wafers with low mass support.
  20. Kitou Yasuo,JPX ; Sugiyama Naohiro,JPX ; Okamoto Atsuto,JPX ; Tani Toshihiko,JPX ; Kamiya Nobuo,JPX, Method of producing single crystals and a seed crystal used in the method.
  21. Ghanayem Steve G. ; Chandrachood Madhavi, Methods and apparatus for reducing particle contamination during wafer transport.
  22. Mezey ; Sr. James J., Methods and apparatus for thermally processing wafers.
  23. Daniel L. Brors ; Robert C. Cook, Mini-batch process chamber.
  24. Glenn A. Roberson, Jr. ; Robert M. Genco ; Robert B. Eglinton ; Wayland Comer ; Gregory K. Mundt, Molecular contamination control system.
  25. Roberson ; Jr. Glenn A. ; Genco Robert M. ; Eglinton Robert B. ; Comer Wayland ; Mundt Gregory K., Molecular contamination control system.
  26. Roberson ; Jr. Glenn A. ; Genco Robert M. ; Eglinton Robert B. ; Comer Wayland ; Mundt Gregory K., Molecular contamination control system.
  27. Roberson ; Jr. Glenn A. ; Genco Robert M. ; Eglinton Robert B. ; Comer Wayland ; Mundt Gregory K., Molecular contamination control system.
  28. Hashimoto, Takahisa; Kihara, Hideki; Furuse, Muneo, Plasma processing apparatus and method for operating the same.
  29. Learn, Arthur J.; Du Bois, Dale R.; Miller, Nicholas E.; Seilheimer, Richard A., Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow.
  30. Klebanoff Leonard E. ; Rader Daniel J., Protection of lithographic components from particle contamination.
  31. Halpin, Michael W.; Jacobson, Paul T., Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow.
  32. Kong, Hua-Shuang; Carter, Jr., Calvin; Sumakeris, Joseph, Susceptor designs for silicon carbide thin films.
  33. Sullivan Steven M., Susceptor for barrel reactor.
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