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Vapor phase growth on semiconductor wafers 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-013/08
  • C23C-016/00
출원번호 US-0830713 (1986-02-19)
우선권정보 JP-0030459 (1985-02-20)
발명자 / 주소
  • Inoue Yosuke (Ibaraki JPX) Suzuki Takaya (Katsuta JPX) Okamura Masahiro (Tokyo JPX) Akiyama Noboru (Hitachi JPX) Fujita Masato (Yamanashi JPX) Tochikubo Hiroo (Tokyo JPX) Iida Shinya (Tama JPX)
출원인 / 주소
  • Hitachi, Ltd. (Tokyo JPX 03) Kokusai Elect. Co. Ltd. (Tokyo JPX 03)
인용정보 피인용 횟수 : 88  인용 특허 : 0

초록 ▼

The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater

대표청구항 ▼

A method of growing a thin layer on a semiconductor wafer from vapor phase, comprising the steps of: holding a multiplicity of semiconductor wafers within a cylindrical heater in a state that said semiconductor wafers are arranged in a vertical direction at substantially regular intervals while maki

이 특허를 인용한 특허 (88)

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