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Activation of refractory metal surfaces for electroless plating 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C21D-001/74
출원번호 US-0047739 (1987-05-08)
발명자 / 주소
  • Iacovangelo Charles D. (Niskayuna NY)
출원인 / 주소
  • General Electric Company (Schenectady NY 02)
인용정보 피인용 횟수 : 43  인용 특허 : 0

초록 ▼

A method of catalytically activating refractory metal surfaces for the subsequent electroless plating of another metal thereon is disclosed, in which the refractory surface is treated while heated in a carburizing atmosphere under conditions which cause the formation of refractory metal carbides on

대표청구항 ▼

A method of catalytically activating a refractory metal surface for the subsequent electroless plating of metal thereon; said method comprising treating the surface while heated in a carburizing atmosphere under conditions which cause carbon to react with refractory metal atoms at the surface, said

이 특허를 인용한 특허 (43)

  1. Arghavani, Reza; Marks, Jeffrey; Bonner, Benjamin A., CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications.
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  3. Ba, Xiaolan; Humayun, Raashina; Danek, Michal; Schloss, Lawrence, Deposition of low fluorine tungsten by sequential CVD process.
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  4. Buynoski, Matthew S.; Besser, Paul R.; King, Paul L.; Paton, Eric N.; Xang, Qi, Electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors.
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  5. Matthew S. Buynoski ; Paul R. Besser ; Paul L. King ; Eric N. Paton ; Qi Xiang, Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors.
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  6. Wang, Deqi; Chandrashekar, Anand; Humayun, Raashina; Danek, Michal, Feature fill with multi-stage nucleation inhibition.
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  7. Chandrashekar, Anand; Jeng, Esther; Humayun, Raashina; Danek, Michal; Gao, Juwen; Wang, Deqi, Feature fill with nucleation inhibition.
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  8. Chen, Feng; Humayun, Raashina; Danek, Michal; Chandrashekar, Anand, Low tempature tungsten film deposition for small critical dimension contacts and interconnects.
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  9. Peter C. Williams ; Steven V. Marx, Low temperature case hardening processes.
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  10. Williams Peter C. ; Marx Steven V., Low temperature case hardening processes.
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  11. Chen, Feng; Humayun, Raashina; Danek, Michal; Chandrashekar, Anand, Low temperature tungsten film deposition for small critical dimension contacts and interconnects.
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  12. Bamnolker, Hanna; Humayun, Raashina; Wang, Deqi; Guan, Yan, Method for depositing extremely low resistivity tungsten.
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  13. Chandrashekar, Anand; Glass, Mirko; Humayun, Raashina; Danek, Michael; Ashtiani, Kaihan; Chen, Feng; Chan, Lana Hiului; Mane, Anil, Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics.
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  14. Chandrashekar, Anand; Glass, Mirko; Humayun, Raashina; Danek, Michal; Ashtiani, Kaihan; Chen, Feng; Chan, Lana Hiului; Mane, Anil, Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics.
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  15. Guan, Yan; Manohar, Abhishek; Wang, Deqi; Chen, Feng; Humayun, Raashina, Method for depositing tungsten film with low roughness and low resistivity.
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  16. Gao, Juwen; Lei, Wei; Danek, Michal; Klawuhn, Erich; Chang, Sean; Powell, Ron, Method for improving adhesion of low resistivity tungsten/tungsten nitride layers.
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  17. Chan, Lana Hiului; Chen, Feng; Levy, Karl B., Method for improving uniformity and adhesion of low resistivity tungsten film.
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  18. Lee, Sang-Hyeob; Collins, Joshua, Method for producing ultra-thin tungsten layers with improved step coverage.
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  19. Lee, Sang-Hyeob; Collins, Joshua, Method for producing ultra-thin tungsten layers with improved step coverage.
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  20. Chen, Feng; Humayun, Raashina; Manohar, Abhishek, Method for reducing tungsten roughness and improving reflectivity.
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  21. Lai, Chiukin Steven; Na, Jeong-Seok; Tarafdar, Raihan; Humayun, Raashina; Danek, Michal, Method for void-free cobalt gap fill.
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  22. Na, Jeong-Seok; Yu, Tianhua; Danek, Michal; Gopinath, Sanjay, Method for void-free cobalt gap fill.
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  23. Bamnolker, Hanna; Collins, Joshua; Sadilek, Tomas; Shin, Hyeong Seop; Ba, Xiaolan; Humayun, Raashina; Danek, Michal; Schloss, Lawrence, Method of forming low resistivity fluorine free tungsten film without nucleation.
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  24. Chen, Feng; Humayun, Raashina; Danek, Michal; Chandrashekar, Anand, Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects.
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  25. Humayun, Raashina; Ashtiani, Kaihan; Levy, Karl B., Methods for forming all tungsten contacts and lines.
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  26. Humayun, Raashina; Ashtiani, Kaihan; Levy, Karl B., Methods for forming all tungsten contacts and lines.
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  27. Chan, Lana Hiului; Wongsenakhum, Panya; Collins, Joshua, Methods for growing low-resistivity tungsten film.
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  28. Chan, Lana Hiului; Ashtiani, Kaihan; Collins, Joshua, Methods for growing low-resistivity tungsten for high aspect ratio and small features.
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  29. Gao, Juwen; Chan, Lana Hiului; Wongsenakhum, Panya, Methods for improving uniformity and resistivity of thin tungsten films.
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  30. Chen, Feng; Yang, Tsung-Han; Gao, Juwen; Shaviv, Roey; Humayun, Raashina; Wang, Deqi, Methods of forming tensile tungsten films and compressive tungsten films.
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  31. Chen, Feng; Yang, Tsung-Han; Gao, Juwen; Danek, Michal, Methods of improving tungsten contact resistance in small critical dimension features.
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  32. Williams, Peter C.; Marx, Steven V., Modified low temperature case hardening processes.
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  33. Wongsenakhum, Panya; Gao, Juwen; Collins, Joshua, Reducing silicon attack and improving resistivity of tungsten nitride film.
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  34. Williams Peter C. ; Marx Steven V., Selective case hardening processes at low temperature.
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  35. Ashtiani, Kaihan; Humayun, Raashina; Dixit, Girish; Battaglia, Anna; Rassiga, Stefano, Ternary tungsten-containing resistive thin films.
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  36. Danek, Michal; Mountsier, Tom; Reid, Jonathan; Gao, Juwen; Fellis, Aaron, Tungsten barrier and seed for copper filled TSV.
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  37. Humayun, Raashina; Manandhar, Sudha; Danek, Michal, Tungsten deposition process using germanium-containing reducing agent.
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  38. Chandrashekar, Anand; Jeng, Esther; Humayun, Raashina; Danek, Michal; Gao, Juwen; Wang, Deqi, Tungsten feature fill.
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  39. Chandrashekar, Anand; Jeng, Esther; Humayun, Raashina; Danek, Michal; Gao, Juwen; Wang, Deqi, Tungsten feature fill.
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  40. Chandrashekar, Anand; Jeng, Esther; Humayun, Raashina; Danek, Michal; Gao, Juwen; Wang, Deqi, Tungsten feature fill.
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  41. Chandrashekar, Anand; Jeng, Esther; Humayun, Raashina; Danek, Michal; Gao, Juwen; Wang, Deqi, Tungsten feature fill with nucleation inhibition.
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  42. Schloss, Lawrence; Ba, Xiaolan, Tungsten films having low fluorine content.
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  43. Danek, Michal; Bamnolker, Hanna; Humayun, Raashina; Gao, Juwen, Tungsten for wordline applications.
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