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Sidewall channel stop process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/225
  • H01L-021/308
출원번호 US-0933500 (1986-11-21)
발명자 / 주소
  • Matloubian Mishel (Dallas TX)
출원인 / 주소
  • Texas Instruments Incorporated (Dallas TX 02)
인용정보 피인용 횟수 : 112  인용 특허 : 0

초록 ▼

A new way of making sidewall channel stops for silicon on insulator devices (including silicon on oxide, silicon on nitride, and silicon on sapphire devices). While the moat regions 11, 13 (where the active devices will be formed) are covered by thick masking material 24, a high energy implantation

대표청구항 ▼

A process for fabricating a semiconductor-on-insulator integrated circuit structure, comprising the steps of: (a) providing a substrate having at a surface thereof a layer of monocrystalline semiconductor material overlying a layer of an insulator; (b) providing a patterned masking layer over said m

이 특허를 인용한 특허 (112)

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