$\require{mediawiki-texvc}$
  • 검색어에 아래의 연산자를 사용하시면 더 정확한 검색결과를 얻을 수 있습니다.
  • 검색연산자
검색도움말
검색연산자 기능 검색시 예
() 우선순위가 가장 높은 연산자 예1) (나노 (기계 | machine))
공백 두 개의 검색어(식)을 모두 포함하고 있는 문서 검색 예1) (나노 기계)
예2) 나노 장영실
| 두 개의 검색어(식) 중 하나 이상 포함하고 있는 문서 검색 예1) (줄기세포 | 면역)
예2) 줄기세포 | 장영실
! NOT 이후에 있는 검색어가 포함된 문서는 제외 예1) (황금 !백금)
예2) !image
* 검색어의 *란에 0개 이상의 임의의 문자가 포함된 문서 검색 예) semi*
"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"

통합검색

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

특허 상세정보

Aluminum nitride sintered body having conductive metallized layer

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) B32B-009/00    C04B-035/58   
미국특허분류(USC) 428/698 ; 428/209 ; 428/210 ; 428/699
출원번호 US-0016557 (1987-02-19)
우선권정보 JP-0033824 (1986-02-20); JP-0033826 (1986-02-20); JP-0171914 (1986-07-23)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 43  인용 특허 : 0
초록

For higher thermal conductivity, stronger adhesion strength, excellent insulating characteristics, and multilayer interconnection, an aluminium sintered body for circuit substrates comprises a novel conductive metallized layer on the surface of the sintered body. The metallized layer comprises at least one element selected from the first group of Mo, W and Ta and at least one element selected from the second group of IIa, III, IVa group elements, lanthanide elements, and actinide elements in the periodic table, as the conductive phase element. The first ...

대표
청구항

An aluminum nitride sintered body, comprising: (a) an insulating layer including at least one element selected from the group consisting of alkaline earth and rare earth group elements as sintering aids and formed by sintering an aluminum nitride body; and (b) a metallized layer formed on said insulating layer, said metallized layer including: (1) a conductive element; and (2) at least one component element selected from the group consisting of IIa, IIIa, IVa, IIIb, lanthanide actinide group elements in periodic law table.

이 특허를 인용한 특허 피인용횟수: 43

  1. Nagase, Toshiyuki; Nagatomo, Yoshiyuki; Kubo, Kazuaki; Negishi, Takeshi. Al/AlN joint material, base plate for power module, power module, and manufacturing method of Al/AlN joint material. USP2012048164909.
  2. Casey Jon Alfred ; Cordero Carla Natalia ; Fasano Benjamin Vito ; Goland David Brian ; Hannon Robert ; Harris Jonathan H. ; Herron Lester Wynn ; Johnson Gregory Marvin ; Patel Niranjan Mohanlal ; Rei. Aluminum nitride body having graded metallurgy. USP1998065763093.
  3. Sato Hideki (Yokohama JPX) Hatori Masakazu (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX). Aluminum nitride circuit board. USP1990034906511.
  4. Sato Hideki (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX). Aluminum nitride circuit substrate. USP1989104873151.
  5. Yasuhisa Yushio JP; Hirohiko Nakata JP; Kazutaka Sasaki JP; Masuhiro Natsuhara JP; Motoyuki Tanaka JP; Yasuhiro Murase JP. Aluminum nitride sintered body and method of preparing the same. USP2002086428741.
  6. Yushio Yasuhisa,JPX ; Nakata Hirohiko,JPX ; Sasaki Kazutaka,JPX ; Natsuhara Masuhiro,JPX ; Tanaka Motoyuki,JPX ; Murase Yasuhiro,JPX. Aluminum nitride sintered body and method of preparing the same. USP2001086271163.
  7. Ohkawa Yoshihiro,JPX ; Ikeda Makoto,JPX ; Miyahara Kenichiro,JPX ; Itoh Yoshiaki,JPX. Aluminum nitride substrate and process for preparation thereof. USP1998115830570.
  8. Monma Jun,JPX ; Asai Hironori,JPX. Aluminum nitride wiring substrate and method for production thereof. USP1999075928769.
  9. Cadden, Charles H.; Goods, Steven H.; Prantil, Vincent C.. Braze system and method for reducing strain in a braze joint. USP2004056732914.
  10. Nagase Toshiyuki,JPX ; Kuromitsu Yoshirou,JPX ; Sugamura Kunio,JPX ; Kanda Yoshio,JPX ; Hatsushika Masafumi,JPX ; Otsuki Masato,JPX. Ceramic circuit board with heat sink. USP2000036033787.
  11. deRochemont L. Pierre ; Farmer Peter H.. Ceramic composite wiring structures for semiconductor devices and method of manufacture. USP2001116323549.
  12. de Rochemont L. Pierre ; Farmer Peter H.. Ceramic composites with improved interfacial properties and methods to make such composites. USP2000116143432.
  13. Horiuchi Michio (Nagano JPX) Harayama Yoichi (Nagano JPX). Ceramic oxide circuit board. USP1997115683791.
  14. Ogawa, Narutoshi; Ochiai, Kensou; Niino, Noritaka; Kooriyama, Shinichi; Konagai, Masashi. Circuit board and electronic device. USP20180710037928.
  15. Horiguchi Akihiro,JPX ; Sumino Hiroyasu,JPX ; Kasori Mitsuo,JPX ; Ueno Fumio,JPX. Circuit board with high strength and high reliability and process for preparing the same. USP2000016013356.
  16. Sato Hideki (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX) Asai Hironori (Kawasaki JPX) Anzai Kazuo (Tokyo JPX) Hatano Tsuyoshi (Yokohama JPX). Circuit substrate comprising nitride type ceramics, method for preparing it, and metallizing composition for use in it. USP1989114883704.
  17. Sato Hideki (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX). Composite alumina-aluminum nitride circuit substrate. USP1989054835065.
  18. Jimarez Lisa Jeanine ; Light David Noel ; Seman Andrew Michael ; Stone David Brian. Conductive bonding design and method for aluminum backed circuits. USP2001016178630.
  19. Jimarez Lisa Jeanine ; Light David Noel ; Seman Andrew Michael ; Stone David Brian. Conductive bonding design for metal backed circuits. USP1999075920037.
  20. Sato Hideki (Yokohama JPX) Mizunoya Nobuyuki (Yokohama JPX). Electronic apparatus having semiconductor device. USP1990024901137.
  21. Enloe Jack H. (8535 Hayshed La. Columbia MD 21045) Lau John W. (14309 Night Hawk Way Gaithersburg MD 20878) Rice Roy W. (5411 Hopark Dr. Alexandria VA 22310). Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite. USP1991055017434.
  22. Premkumar M. K. ; Sawtell Ralph R. ; Phelps Frankie E. ; DerKacy James A. ; Yun David I.. Incorporating partially sintered preforms in metal matrix composites. USP1998075775403.
  23. Schachner Herbert (Grand-Lancy CHX) Horlaville Grard (Reignier FRX). Laminate material and its use as heat-sink. USP1993125272009.
  24. Araki,Kiyoshi; Kida,Masahiro; Ishikawa,Takahiro; Bessyo,Yuki; Makino,Takuma. Laminated radiation member, power semiconductor apparatus, and method for producing the same. USP2007017170186.
  25. Kiyoshi Araki ; Masahiro Kida JP; Takahiro Ishikawa JP; Yuki Bessyo JP; Takuma Makino JP. Laminated radiation member, power semiconductor apparatus, and method for producing the same. USP2002116485816.
  26. Katsuda, Yuji; Yoshikawa, Jun; Masuda, Masaaki; Ihara, Chikashi. Material of low volume resistivity, an aluminum nitride sintered body and a member used for the production of semiconductors. USP2003086607836.
  27. Sawtell Ralph R. (Monroeville PA) Premkumar Mosur K. (Monroeville PA) Yun David I. (Murrysville PA). Metal matrix composites containing electrical insulators. USP1997045616421.
  28. Jin Sungho ; Johnson ; Jr. David Wilfred ; Law Henry Hon ; Thomson ; Jr. John ; Tiefel Thomas Henry. Metallization of ceramic through application of an adherent reducible layer. USP1998035725938.
  29. Asai Hironori (Kanagawa-ken JPX) Sugiura Yasuyuki (Kanagawa-ken JPX). Metallized aluminum nitride substrate. USP1997065637406.
  30. Bates Richard A. ; Cordero Carla N. ; Fasano Benjamin V. ; Goland David B.,PLX ; Hannon Robert ; Herron Lester W. ; Johnson Gregory M. ; Reitter Andrew ; Shinde Subhash L. ; Studzinski Lisa. Method for controlling of certain second phases in aluminum nitride. USP2001036200373.
  31. Tsukada Mineharu (Kawasaki JPX) Hida Masaharu (Kawasaki JPX) Omote Koji (Kawasaki JPX). Method for forming a ceramic circuit substrate. USP1996115575872.
  32. Bates Richard A. ; Cordero Carla N. ; Fasano Benjamin V. ; Goland David B.,PLX ; Hannon Robert ; Herron Lester W. ; Johnson Gregory M. ; Reitter Andrew ; Shinde Subhash L. ; Studzinski Lisa. Method for the controlling of certain second phases in aluminum nitride. USP2001106306528.
  33. Bates Richard A. ; Cordero Carla N. ; Fasano Benjamin V. ; Goland David B.,PLX ; Hannon Robert ; Herron Lester W. ; Johnson Gregory M. ; Reitter Andrew ; Shinde Subhash L. ; Studzinski Lisa. Method for the controlling of certain second phases in aluminum nitride. USP1999126004624.
  34. deRochemont,L. Pierre; Farmer,Peter H.. Method of manufacture of ceramic composite wiring structures for semiconductor devices. USP2006057047637.
  35. Ueno Fumio (Yokohama JPX) Kasori Mitsuo (Kawasaki JPX) Goto Yoshiko (Tokyo JPX) Horiguchi Akihiro (Kawasaki JPX). Method of manufacturing circuit board and circuit board itself manufactured by said method. USP1994025286927.
  36. Lin, Hongy; Smith, Jason E.; Block, Daniel J.. Methods of securing a thermocouple to a ceramic substrate. USP2010117832616.
  37. Tanifuji Nozomi (Nagoya JPX) Naito Akihiko (Nagoya JPX) Sawada Koji (Konan JPX) Nomura Tohru (Kariya JPX) Miyase Yoshiyuki (Okazaki JPX) Nagasaka Takashi (Anjo JPX). Multilayer ceramic circuit substrate, process for producing the same, and electrically conductive material for use in mu. USP1997055627344.
  38. Ikeda Tatsuya,JPX ; Kanda Atsushi,JPX. Multilayered wiring substrate of aluminum nitride having a high dielectric layer and method of manufacture thereof. USP1998015709928.
  39. Sakuraba Masami,JPX ; Kimura Masami,JPX ; Nakamura Junji,JPX ; Takahara Masaya,JPX. Power module circuit board and a process for the manufacture thereof. USP2000016013357.
  40. Ikeda Kazuo,JPX ; Komorita Hiroshi,JPX ; Sato Yoshitoshi,JPX ; Komatsu Michiyasu,JPX ; Mizunoya Nobuyuki,JPX. Silicon nitride circuit board. USP2000036040039.
  41. Ikeda Kazuo,JPX ; Komorita Hiroshi,JPX ; Sato Yoshitoshi,JPX ; Komatsu Michiyasu,JPX ; Mizunoya Nobuyuki,JPX. Silicon nitride circuit board. USP1999125998000.
  42. Allman Derryl D. J. ; Lee Steven S.. Spin-on conductor process for integrated circuits. USP1998035728626.
  43. Tenhover Michael A. (East Amherst NY). Ultra-smooth ceramic substrates and magnetic data storage media prepared therefrom. USP1997055626943.