IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0948086
(1987-12-31)
|
우선권정보 |
JP-0012874 (1986-01-23) |
발명자
/ 주소 |
- Hokuyou Shigeru (Itami JPX)
|
출원인 / 주소 |
- Mitsubishi Denki Kabushiki Kaisha (Tokyo JPX 03)
|
인용정보 |
피인용 횟수 :
18 인용 특허 :
2 |
초록
▼
A process for manufacturing a solar cell device, including the steps of (1) forming, on a semiconductor substrate, a removable layer having a crystal lattice structure identical or similar to that of the substrate; (2) forming, on the removable layer, a solar cell structure having a crystal lattice
A process for manufacturing a solar cell device, including the steps of (1) forming, on a semiconductor substrate, a removable layer having a crystal lattice structure identical or similar to that of the substrate; (2) forming, on the removable layer, a solar cell structure having a crystal lattice structure identical or similar to that of the removable layer; (3) forming, on the solar cell structure, a reinforcement layer having a sufficient mechanical strength to support solar cell structure, the removal layer being formed of a material whose rate of etching is higher than that of the solar cell structure and the reinforcement layer; (4) and removing the removable layer by etching, to separate the solar cell structure supported by the reinforcement layer from the substrate, so that the surface of the solar cell structure for receiving incident light is exposed.
대표청구항
▼
A process for manufacturing a solar cell device, comprising the steps of: providing a semiconductor substrate; forming, on said substrate, a removable layer having a crystal lattice structure identical or similar to that of said structure; forming, on said removable layer, a solar cell structure hav
A process for manufacturing a solar cell device, comprising the steps of: providing a semiconductor substrate; forming, on said substrate, a removable layer having a crystal lattice structure identical or similar to that of said structure; forming, on said removable layer, a solar cell structure having a crystal lattice structure identical or similar to that of said removable layer; forming, on said solar cell structure, a reinforcement layer having a sufficient mechanical strength to support said solar cell structure, said removal layer being formed of a material whose rate of etching is higher than that of said solar cell structure and that of said reinforcement layer; and selectively removing said removable layer by etching, to separate said solar cell structure supported by said reinforcement layer from said substrate, so that a surface of said solar cell structure for receiving incident light is exposed; wherein said step of forming said solar cell structure comprises forming, on said removable layer, a first solar cell layer having a crystal lattice structure identical or similar to that of said removable layer, and having a first conductivity type, forming, on said first solar cell layer, a second solar cell layer having a crystal lattice structure identical or similar to that of said first solar cell layer and having said first conductivity type, said first and said second solar cell layers forming a heterojunction therebetween, and forming, on said second solar cell layer, a third solar cell layer having a crystal lattice structure identical to said second solar cell layer and having a second conductivity type; wherein said substrate is a single crystal substrate formed of GaAs or AlGaAs, said removable layer is formed of Alx1Ga1-x1As, where x1≥0.9, said first solar cell layer is formed of Alx2Ga1-x2As, where 0.4≤x2≤0.8, and said second and said third solar cell layer are formed of GaAs.
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