초록 ▼

The insulating and stabiity characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from t

The insulating and stabiity characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from the oxygen-containing material of about 10-6 torr to about 10 torr during annealing temperatures of about 500°C. to about 1200°C. Such is carried out for a time sufficient to enhance the insulating and stability characteristics of the silicon dioxide insulator.

대표청구항 ▼

A process for enhancing the insulating and stability characteristics of SiO2 insulator for a field-effect transistor semiconductor device which comprises providing a silicon dioxide layer on a substrate, and then annealing; wherein the annealing includes providing an ambient containing gaseous oxyge

A process for enhancing the insulating and stability characteristics of SiO2 insulator for a field-effect transistor semiconductor device which comprises providing a silicon dioxide layer on a substrate, and then annealing; wherein the annealing includes providing an ambient containing gaseous oxygen-containing species is at least one member selected from the group consisting of oxygen, ozone, nitrous oxide, and hydrogen peroxide to provide a partial pressure from said oxygen-containing species of about 10-6 torr to about 2×10-2 torr during annealing temperatures of about 600°C. to about 1100°C. for a time sufficient to enhance the insulating and stability characteristics of said SiO2 insulator.