초록 ▼

In an output driver semiconductor circuit, a protection circuit is used to protect the output NPN transistor from being destroyed. The protection circuit comprises an excessive current detector for detecting an excessive collector current of the output NPN transistor, an excessive temperature detect

In an output driver semiconductor circuit, a protection circuit is used to protect the output NPN transistor from being destroyed. The protection circuit comprises an excessive current detector for detecting an excessive collector current of the output NPN transistor, an excessive temperature detector for detecting an excessive temperature of the output transistor, and an OR gate for taking a logical sum of output signals of the detectors. According to the output signal of the OR gate, a base current of the control NPN transistor is controlled, so that a base current of the output transistor is kept below a predetermined value.

대표청구항 ▼

An output driver semiconductor circuit comprising: first, second, and third terminals; an output NPN transistor whose collector and emitter are connected to said first and second terminals, respectively; a control NPN transistor whose emitter is connected to the base of said output NPN transistor, a

An output driver semiconductor circuit comprising: first, second, and third terminals; an output NPN transistor whose collector and emitter are connected to said first and second terminals, respectively; a control NPN transistor whose emitter is connected to the base of said output NPN transistor, and whose base and collector are operatively connected to said third terminal; a protection circuit, connected between the base of said output NPN transistor and the base of said control NPN transistor, for detecting a collector current of said output NPN transistor based on a base-emitter voltage thereof and for controlling a base current of said control NPN transistor to turn the control transistor on or off, the protection circuit comprising a first detection circuit for detecting an excessive collector current of said output NPN transistor, a second detection circuit for detecting an excessive temperature of said output NPN transistor, a logic circuit for providing a logical sum of output signals of said protection circuits and delaying the output of the logical sum for a predetermined time period, a latch circuit for latching an output signal of said logic circuit which is used to control the base current of said control NPN transistor, and a limit circuit for controlling the base current of said control NPN transistor, so that a base current of said output NPN transistor is reduced to a predetermined value; a constant-voltage circuit for generating a constant voltage; a comparator for comparing a constant voltage of said constant-voltage circuit and a voltage corresponding to an input voltage of said third terminal; and a logic gate for providing a logical product of an output signal of said comparator and an output signal of said latch circuit, the logic product beig used to control the base current of said control NPN transistor.