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Electrical insulating, sintered aluminum nitride body having a high thermal conductivity and process for preparing the s 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
  • H01L-029/62
  • C04B-035/52
  • F27B-009/10
출원번호 US-0084073 (1987-08-11)
우선권정보 JP-0188479 (1986-08-13)
발명자 / 주소
  • Takeda Yukio (Hitachi JPX) Ogihara Satoru (Hitachi JPX)
출원인 / 주소
  • Hitachi, Ltd. (Tokyo JPX 03)
인용정보 피인용 횟수 : 19  인용 특허 : 6

초록

The present invention provides a highly thermal conductive, electrical insulating ceramic body having at least 90% of theoretical density and comprising 20 to 40% by weight of silicon carbide, the balance being substantially aluminum nitride, the silicon carbide containing not more than 0.1 by weigh

대표청구항

A highly thermal conductive, electrical insulating aluminum nitride sintered body having at least 90% of theoretical density, which comprises 20 to 40% by weight of silicon carbide, the balance being substantially aluminum nitride, the silicon carbide containing not more than 0.1% by weight of sum t

이 특허에 인용된 특허 (6)

  1. Matsushita Yasuo (Hitachi JPX) Nakamura Kousuke (Hitachi JPX) Ura Mitsuru (Hitachi JPX), Ceramic packaged semiconductor device.
  2. Matsushita Yasuo (Hitachi JPX) Nakamura Kousuke (Hitachi JPX) Ura Mitsuru (Hitachi JPX) Kobayashi Fumiyuki (Sagamihara JPX), Ceramic packaged semiconductor device.
  3. Clark Terence J. (Summit NJ) Johnson Robert E. (Summit NJ), Fabrication of SiC - AlN alloys.
  4. Sugimoto Masahiro (Yokosuka JPX) Wakasugi Yasumasa (Kawasaki JPX) Harada Shigeki (Kawasaki JPX), Heatsink package for flip-chip IC.
  5. Matsushita Yasuo (Hitachi JPX) Takeda Yukio (Hitachi JPX) Nakamura Kousuke (Hitachi JPX) Ohkoshi Tokio (Toyohashi JPX), Semiconductor device having electrically insulating substrate of SiC.
  6. Suzuki Keiichiro (Yokohama JPX), Silicon carbide-aluminum nitride sintered article and process for its production.

이 특허를 인용한 특허 (19)

  1. Wakamatsu Tetsuo,JPX, Aluminum nitride junction structure.
  2. Fukui, Akira, Aluminum-silicon carbide semiconductor substrate and method for producing the same.
  3. Odaka, Fumio, Ceramic sintered body and method of manufacturing ceramic sintered body.
  4. Nakamura Kazutaka,JPX ; Kaneko Kazuhiro,JPX, Chip type varistor and ceramic compositions for the same.
  5. Horiguchi Akihiro (Kanagawa-ken JPX) Monma Jun (Kanagawa-ken JPX) Kimura Kazuo (Kanagawa-ken JPX) Oh-Ishi Katsuyoshi (Kanagawa-ken JPX) Ueno Fumio (Tokyo JPX) Kasori Mitsuo (Kanagawa-ken JPX) Sumino , Circuit substrate including insulating layer of aluminum nitride and electrically conductive layer of conductive compone.
  6. Clocher Dennis F. ; Daves Glenn G. ; Elenius Peter M. ; Lisowski Joseph J. ; Sullivan Joseph M., High performance, low cost multi-chip modle package.
  7. Kolberg, Uwe; Nuettgens, Sybill; Kirsch, Thomas; Gross, Andreas; Schaefer, Ernst-Walter, Method and device for producing glass products from a glass melt.
  8. Agarwal, Vishnu K., Methods of forming semiconductor circuit constructions and capacitor constructions.
  9. Ikeda Tatsuya,JPX ; Kanda Atsushi,JPX, Multilayered wiring substrate of aluminum nitride having a high dielectric layer and method of manufacture thereof.
  10. Kim Sung C. (Boise ID) Yu Chris C. (Boise ID) Doan Trung T. (Boise ID), Process for depositing aluminum nitride (AlN) using nitrogen plasma sputtering.
  11. Enck Rudolph C. ; Harris Jonathan H. ; Youngman Robert A. ; Nemecek Thomas S., Process for making a low electrical resistivity, high purity aluminum nitride electrostatic chuck.
  12. Benker Werner (Selb DEX), Process for producing ceramic components of silicon carbide.
  13. Agarwal, Vishnu K., Semiconductor circuit constructions, capacitor constructions, and methods of forming semiconductor circuit constructions and capacitor constructions.
  14. Agarwal, Vishnu K., Semiconductor circuit constructions, capacitor constructions, and methods of forming semiconductor circuit constructions and capacitor constructions.
  15. Vishnu K. Agarwal, Semiconductor circuit constructions, capacitor constructions, and methods of forming semiconductor circuit constructions and capacitor constructions.
  16. Shinichi Yamagata JP; Yugaku Abe JP; Makoto Imamura JP; Akira Fukui JP; Yoshishige Takano JP; Takatoshi Takikawa JP; Yoshiyuki Hirose JP, Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same.
  17. Yamagata Shinichi,JPX ; Abe Yugaku,JPX ; Imamura Makoto,JPX ; Fukui Akira,JPX ; Takano Yoshishige,JPX ; Takikawa Takatoshi,JPX ; Hirose Yoshiyuki,JPX, Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same.
  18. Yamagata, Shinichi; Abe, Yugaku; Imamura, Makoto; Fukui, Akira; Takano, Yoshishige; Takikawa, Takatoshi; Hirose, Yoshiyuki, Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same.
  19. Yamagata, Shinichi; Abe, Yugaku; Imamura, Makoto; Fukui, Akira; Takano, Yoshishige; Takikawa, Takatoshi; Hirose, Yoshiyuki, Susbstrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same.
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