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Method for forming Cu In Se2 films 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/38
출원번호 US-0942918 (1986-12-22)
발명자 / 주소
  • Ermer James H. (Los Angeles CA) Love Robert B. (Chatsworth CA)
출원인 / 주소
  • Atlantic Richfield Company (Los Angeles CA 02)
인용정보 피인용 횟수 : 150  인용 특허 : 3

초록

A method for fabricating a copper indium diselenide semiconductor film comprising use of DC magnetron sputtering apparatus to sequentially deposit a first film of copper on a substrate and a second film of indium on the copper film. Thereafter the substrate with copper and indium films is heated in

대표청구항

A method for fabricating a copper indium diselenide semiconductor film comprising: in a single vacuum chamber sequentially depositing a film of copper on a substrate by DC magnetron sputtering from a first cathode and depositing indium on said film of copper by DC magnetron sputtering from a second

이 특허에 인용된 특허 (3)

  1. Love Robert B. (Chatsworth CA) Choudary Uppala V. (Chatsworth CA), Method for forming photovoltaic cells employing multinary semiconductor films.
  2. Mickelsen Reid A. (Bellevue WA) Chen Wen S. (Seattle WA), Methods for forming thin-film heterojunction solar cells from I-III-VI2 chalcopyrite compounds, and solar.
  3. Kapur Vijay K. (Northridge CA) Choudary Uppala V. (Chatsworth CA) Chu Alan K. P. (Granada Hills CA), Process of forming a compound semiconductive material.

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