초록 ▼

The invention relates to a charge-coupled image sensor of the line transfer type comprising a number of parallel lines (2-6) which are each constituted by an n-phase CCD. An electrode (12-16) of each CCD is arranged parallel to this CCD separately for each CCD. The other (n-1) electrodes (17-20) ext

The invention relates to a charge-coupled image sensor of the line transfer type comprising a number of parallel lines (2-6) which are each constituted by an n-phase CCD. An electrode (12-16) of each CCD is arranged parallel to this CCD separately for each CCD. The other (n-1) electrodes (17-20) extend transversely to the charge transport direction over all CCD\s. The first-mentioned electrode (12-16) is used as a selection gate and is moreover used, depending upon the applied voltage, as an integration gate or as a blocking gate during the integration period.

대표청구항 ▼

A charge coupled line transfer image sensor having improved resolution comprising: a semiconductor body; a plurality of adjacent parallel charge coupled devices formed at a surface of said body, each device of said plurality of devices forming a line of spaced-apart photo-sensitive elements; a plura

A charge coupled line transfer image sensor having improved resolution comprising: a semiconductor body; a plurality of adjacent parallel charge coupled devices formed at a surface of said body, each device of said plurality of devices forming a line of spaced-apart photo-sensitive elements; a plurality of electrodes, each electrode associated with one of n-phases at a time, each photo-sensitive element lying at least partially under electrodes associated with a first phase and another phase; means for selectively biasing the electrodes associated with said first phase during recording of a radiation image in a first mode selectively to create potential barriers in the body under said electrodes associated with the first phase between adjacent photo-sensitive elements in said line or in a second mode to create potential barriers in the body between said electrodes associated with said first phase whereby adjacent photosensitive elements can be selectively laterally shifted to improve the resolution of the image sensor.