초록 ▼

An image sensor, comprising a semiconductor layer formed on at least a first region of a substrate; first electrodes arranged in line and electrically connected to the semiconductor layer of said first region; and second electrodes arranged in line and electrically connected to said semiconductor la

An image sensor, comprising a semiconductor layer formed on at least a first region of a substrate; first electrodes arranged in line and electrically connected to the semiconductor layer of said first region; and second electrodes arranged in line and electrically connected to said semiconductor layer of said first region. The second electrodes are respectively formed as a common electrode, and each of the first electrodes, a portion of said second electrode facing the first electrode and the semiconductor layer positioned therebetween form a photo-sensing element. First wires respectively extend from said first electrodes to a second region of said substrate. An insulating layer is continuously formed on the first and second regions, covering said photo-sensing elements and the first wires as well as second wires formed in parallel on the insulating layer of said second region. The second wires are electrically connected to the first wires at through holes formed in the insulating layer.

대표청구항 ▼

An image sensor, comprising: a substrate; a semiconductor layer continuously formed over the entire surface of said substrate; a plurality of first electrode formed on said semiconductor layer, said plurality of first electrodes arranged in a predetermined arrangement and electrically connected to s

An image sensor, comprising: a substrate; a semiconductor layer continuously formed over the entire surface of said substrate; a plurality of first electrode formed on said semiconductor layer, said plurality of first electrodes arranged in a predetermined arrangement and electrically connected to said semiconductor layer on a first region of said substrate; a plurality of electrode portions formed on said semiconductor layer on said first region of said substrate and arranged in said predetermined arrangement, being electrically connected to said semiconductor layer on said first region, groups of said electrode portions each having a common second electrode formed on said semiconductor layer, said plurality of electrode portions having a predetermined arrangement and positioned adjacent said first plurality of electrodes wherein said electrode portions, said first electrodes and said semiconductor layer positioned therebetween comprise photo-sensing elements; first wires formed on said semiconductor layer and respectively extended from said first electrodes to said semiconductor layer on a second region of said substrate; an insulating layer formed on said first and second region, covering said photo-sensing elements and said first wires; and second wires formed in parallel on said insulating layer of said second region, said second wires electronically connected to said first wires at through holes formed in said insulating layer.