초록 ▼

The present invention is directed to several embodiments of a hermetically sealed semiconductor package. One embodiment is constructed from a substrate of a first copper alloy, a cover member of a second copper alloy and a lead frame of a third copper alloy. A low melting point sealing glass composi

The present invention is directed to several embodiments of a hermetically sealed semiconductor package. One embodiment is constructed from a substrate of a first copper alloy, a cover member of a second copper alloy and a lead frame of a third copper alloy. A low melting point sealing glass composite is disposed between the cover member and the substrate for sealing the lead frame therebetween. The third copper alloy is precipitation hardenable and has excellent softening resistance at glass sealing temperatures as compared with other conventionally used alloys. In another embodiment, a clad composite having a core of the third copper alloy and cladding layer of a copper alloy having a low oxidation rate may be advantageously used for the lead frame.

대표청구항 ▼

A semiconductor package, comprising: a substrate member of a first alloy; a cover member of a second alloy; a clad lead frame comprising a core layer of a third alloy and a first outer layer of a fourth alloy, said clad lead frame being disposed between said substrate member and said cover member; s

A semiconductor package, comprising: a substrate member of a first alloy; a cover member of a second alloy; a clad lead frame comprising a core layer of a third alloy and a first outer layer of a fourth alloy, said clad lead frame being disposed between said substrate member and said cover member; said third alloy being a thermally stable, glass sealable alloy which maintains or increases in yield strength at temperatures of less than about 475°C. for the time required to glass seal and has a coefficient of thermal expansion of about 140×10-7 to about 180×10-7 in/in/°C.; said fourth alloy being oxidation resistant and decreasing in yield strength at temperatures of less than about 475°C. for the time required to glass seal and having a coefficient of thermal expansion compatible with said third alloy; and a sealing glass with a melting temperature of less than about 450°C. comprising a glass matrix selected from the group consisting of borate, lead borate, lead-zinc borate, borosilicate, lead borosilicate and lead-zinc borosilicate glasses, said sealing glass having a paritculate additive having a solubility of less than about 10% in said glass matrix mixed into said glass matrix to increase the coefficient of thermal expansion of said sealing glass to from about 140×10-to about 180×10-7in/in/°C. so as to be compatible with said first, second, third and fourth alloys, said sealing glass being disposed between said substrate member and said cover member for sealing said package.