초록 ▼

A method for processing solar cells, and particularly thin solar cells is disclosed. The method contemplates processing the front surface of the cell on a wafer of normal thickness. A transparent substrate is adhered to the front of the processed cell. The bulk semiconductor layer is then thinned to

A method for processing solar cells, and particularly thin solar cells is disclosed. The method contemplates processing the front surface of the cell on a wafer of normal thickness. A transparent substrate is adhered to the front of the processed cell. The bulk semiconductor layer is then thinned to the desired thickness. An amorphous doped semiconductor material is applied to the back surface of the thinned wafer and exposed to pulsed laser energy having a duration and intensity long enough to melt the amorphous material, but short enough to prevent thermal damage to the bondline. A back surface dielectric, backside contact mask and back surface reflector metal complete the cell.

대표청구항 ▼

A method of fabricating a solar cell from a wafer formed of a semiconductor material and having a front surface and a back surface, the semiconductor material forming a bulk layer having a selected first conductivity type, the method comprising the steps of: forming a front surface junction layer ha

A method of fabricating a solar cell from a wafer formed of a semiconductor material and having a front surface and a back surface, the semiconductor material forming a bulk layer having a selected first conductivity type, the method comprising the steps of: forming a front surface junction layer having a second conductivity type opposite that of the bulk layer and in contact therewith; adhering a transparent support member to the front surface of the wafer to provide structural support for the wafer and to admit electromagnetic radiation into the cell, the interface between the support member and the wafer forming a bondline; thinning the bulk layer; forming a doped ohmic contact layer in the bottom surface of the wafer by depositing a layer of amorphous material containing a first conductivity type dopant on said bottom surface, and melting the amorphous material using a pulsed laser energy source having an intensity high enough to melt the amorphous material and a thin layer of the semiconductor material adjacent the bottom surface, and low enough to insure that the bondline will not be damaged; applying a dielectric layer to the back surface of the ohmic layer, and forming contacts to the ohmic layer through openings formed in the dielectric layer. A solar cell formed by the method of claim 10 wherein said thinning step includes thinning the wafer to a thickness of less than 50 microns.