초록

Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1×107 ohm/cm have been achieved.

대표청구항 ▼

A process for producing a semiconductor body comprising the steps of (1) forming a region of semi-insulating Group III-V based material by contacting a substrate with a deposition gas stream and (2) forming a conductive region for said semiconductor body, the process characterized in that said regio

A process for producing a semiconductor body comprising the steps of (1) forming a region of semi-insulating Group III-V based material by contacting a substrate with a deposition gas stream and (2) forming a conductive region for said semiconductor body, the process characterized in that said region of semi-insulating material is further formed by introducing into said deposition gas stream a vaporized dopant precursor comprising a composition chosen from the group consisting of organo-metallic titanium-based compositions, wherein said deposition gas stream is produced by combining entity compositions chosen from the group consisting of an organic indium-based compound together with a source of phosphorus and an organic gallium-based compound together with a source of antimony.