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Process for forming deposited film including carbon as a constituent element 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B05D-003/06
  • C23C-016/30
출원번호 US-0831411 (1986-02-20)
우선권정보 JP-0034772 (1985-02-22); JP-0035602 (1985-02-25); JP-0036762 (1985-02-26); JP-0038573 (1985-02-27); JP-0037413 (1985-02-28); JP-0038900 (1985-03-01)
발명자 / 주소
  • Ishihara Shunichi (Ebina JPX) Ohno Shigeru (Yokohama JPX) Kanai Masahiro (Tokyo JPX) Oda Shunri (Tokyo JPX) Shimizu Isamu (Yokohama JPX)
출원인 / 주소
  • Canon Kabushiki Kaisha (Tokyo JPX 03)
인용정보 피인용 횟수 : 18  인용 특허 : 39

초록

A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reacti

대표청구항

A process for forming a deposited film including carbon as a constitutent element of said film, comprising: separately introducing into a film forming space housing a substrate therein a gaseous or gasified active species (A) formed in an activation chamber (a) by decomposition of a chain or cyclic

이 특허에 인용된 특허 (39)

  1. Ovshinsky Stanford R. (Bloomfield Hills MI) Izu Masatsugu (Birmingham MI), Amorphous semiconductors equivalent to crystalline semiconductors.
  2. Tsuge, Kazunori; Tawada, Yoshihisa; Hamakawa, Yoshihiro, Amorphous silicon semiconductor and process for same.
  3. Nath Prem (Rochester MI), Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition.
  4. Yoshizawa Shuji (Tokyo JPX), Film-fabricating method and apparatus for the same.
  5. Hirooka Masaaki (Toride JPX) Ishihara Shunichi (Ebina JPX) Hanna Junichi (Yokohama JPX) Shimizu Isamu (Yokohama JPX), Formation of deposited film.
  6. Duchemin Jean-Pascal (Paris FRX) Leguen Daniel (Paris FRX) Bonnet Michel (Paris FRX) Koelsch Francois (Paris FRX) Beuchet Gerard (Paris FRX), Gas-phase process for the production of an epitaxial layer of indum phosphide.
  7. Dreiling Mark J. (Bartlesville OK), Healing pinhole defects in amorphous silicon films.
  8. Komatsu Toshiyuki (Kawasaki JPX) Hirai Yutaka (Tokyo JPX) Nakagawa Katsumi (Tokyo JPX) Fukuda Tadaji (Kawasaki JPX), Image-forming member for electrophotography comprising hydrogenated amorphous matrix of silicon and/or germanium.
  9. Sanjurjo Angel (San Jose CA), In situ production of silicon crystals on substrate for use in solar cell construction.
  10. Ovshinsky Stanford R. (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI) Kastner Marc A. (Newton Lower Falls MA), Method and apparatus for making layered amorphous semiconductor alloys using microwave energy.
  11. Izu Masatsugu (Birmingham MI) Ovshinsky Herbert C. (Oak Park MI), Method for continuously producing tandem amorphous photovoltaic cells.
  12. Yamazaki Shunpei (Tokyo JPX), Method for depositing silicon carbide non-single crystal semiconductor films.
  13. Saitoh, Keishi; Ando, Wataru, Method for forming a deposition film.
  14. Ovshinsky Stanford R. (Bloomfield Hills MI) Izu Masatsugu (Birmingham MI), Method for optimizing photoresponsive amorphous alloys and devices.
  15. Kamo Mutsukazu (Tsuchiura JPX) Matsumoto Seiichiro (Sakura JPX) Sato Yoichiro (Sakura JPX) Setaka Nobuo (Nagareyama JPX), Method for synthesizing diamond.
  16. Ovshinsky Stanford R. (Bloomfield Hills MI) Allred David D. (Troy MI) Walter Lee (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Method of depositing semiconductor films by free radical generation.
  17. Ovshinsky Stanford R. (Bloomfield Hills MI) Allred David D. (Troy MI) Walter Lee (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Method of depositing semiconductor films by free radical generation.
  18. Ueno Tsuyoshi (Fujisawa JPX) Suzuki Katsumi (Tokyo JPX) Hirose Masataka (Hiroshima JPX), Method of forming amorphous silicon film.
  19. Hamakawa Yoshihiro (3-17-4 ; Minami-Hanayashiki Kawanishi ; Hyogo JPX) Tawada Yoshihisa (14-39 ; Oike-Miyamadai ; Kita-ku Kobe ; Hyogo JPX), Method of forming amorphous silicon films.
  20. Tsu Raphael (Troy MI) Ovshinsky Stanford R. (Bloomfield Hills MI) Hernandez Jesus (Royal Oak MI) Martin Denis (Rochester MI), Method of forming photovoltaic quality amorphous alloys by passivating defect states.
  21. Yamazaki, Shunpei, Method of making a non-single-crystalline semi-conductor layer on a substrate.
  22. Ovshinsky Stanford R. (Bloomfield Hills MI) Allred David D. (Troy MI) Walter Lee (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Method of making amorphous semiconductor alloys and devices using microwave energy.
  23. Ovshinsky Stanford R. (Bloomfield Hills MI) Allred David D. (Troy MI) Walter Lee (Bloomfield Hills MI) Hudgens Stephen J. (Southfield MI), Method of making amorphous semiconductor alloys and devices using microwave energy.
  24. John Puthenveetil K. (214 Wychwood Park London ; Ontario CAX N6G 1S3) Tong Bok Y. (2 Milford Crescent London ; Ontario CAX N5X 1A8) Wong Sau K. (673 Cranbrook Rd. London ; Ontario CAX N6K 1W8) Chik K, Method of making highly stable modified amorphous silicon and germanium films.
  25. Yamazaki Shunpei (Tokyo JPX), Method of making magnetic material layer.
  26. Bachmann Peter K. (Aachen DEX), Method of manufacturing fluorine-doped optical fibers.
  27. Shimomoto Yasuharu (Tokyo JPX) Tsukada Toshihisa (Tokyo JPX) Sasano Akira (Tokyo JPX) Tanaka Yasuo (Kokubunji JPX) Yamamoto Hideaki (Hachioji JPX) Takasaki Yukio (Hachioji JPX), Method of producing photoelectric transducers.
  28. Kyel Birol (Hopewell NJ), Methods and apparatus for generating plasmas.
  29. Yamazaki Shunpei (21-21 Kitakarasuyama 7-chome Setagaya-ku ; Tokyo JPX), Non-single-crystalline semiconductor layer on a substrate and method of making same.
  30. Saitoh Keishi (Ibaraki JPX) Ohnuki Yukihiko (Kawasaki JPX) Ohno Shigeru (Yokohama JPX), Photoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layer.
  31. Miller Stephen C. (Simi Valley CA), Plasma assisted deposition system.
  32. Shimizu Isamu (Yokohama JPX) Ogawa Kyosuke (Tokyo JPX) Inoue Eiichi (Tokyo JPX), Process for forming amorphous silicon film.
  33. Fukuda Tadaji (Kawasaki JPX) Nishigaki Yuji (Tokyo JPX), Process for forming deposition film.
  34. Shimizu Isamu (Yokohama JPX) Ogawa Kyosuke (Tokyo JPX) Inoue Eiichi (Tokyo JPX) Kanbe Junichiro (Yokohama JPX), Process for producing photoconductive member from gaseous silicon compounds.
  35. Hirooka, Masaaki, Process for producing silicon-containing deposit film.
  36. Ishihara Shunichi (Ebina JPX) Saito Keishi (Nabari JPX) Oda Shunri (Tokyo JPX) Shimizu Isamu (Yokohama JPX), Process for the preparation of photoelectromotive force member.
  37. Schumacher ; Joseph C., Process for the production of silicon of high purity.
  38. Chu ; Ting L., Process for utilizing low-cost graphite substrates for polycrystalline solar cells.
  39. Matsuo Seitaro (Hachioji JPX) Muramoto Susumu (Hachioji JPX) Ehara Kohei (Kodaira JPX) Itsumi Manabu (Hoya JPX), Semiconductor device and manufacturing process thereof.

이 특허를 인용한 특허 (18)

  1. Kopacz Stanislaw ; Webb Douglas Arthur ; Leusink Gerrit Jan ; LeBlanc Rene Emile ; Ameen Michael S. ; Hillman Joseph Todd ; Foster Robert F. ; Rowan ; Jr. Robert Clark, Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions.
  2. Stanislaw Kopacz ; Douglas Arthur Webb ; Gerrit Jan Leusink ; Rene Emile LeBlanc ; Michael S. Ameen ; Joseph Todd Hillman ; Robert F. Foster ; Robert Clark Rowan, Jr., Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions.
  3. Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition.
  4. Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ) LeBlanc Rene E. (East Haven CT), Apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating suscept.
  5. Fujioka Yasushi,JPX ; Okabe Shotaro,JPX ; Kanai Masahiro,JPX ; Yoshino Takehito,JPX ; Sakai Akira,JPX ; Hori Tadashi,JPX, Continuous forming method for functional deposited films.
  6. Fujioka Yasushi,JPX ; Okabe Shotaro,JPX ; Kanai Masahiro,JPX ; Yoshino Takehito,JPX ; Sakai Akira,JPX ; Hori Tadashi,JPX, Continuous forming method for functional deposited films and deposition apparatus.
  7. Hillman Joseph T. ; Foster Robert F., Low temperature plasma-enhanced formation of integrated circuits.
  8. Golovato Stephen N. ; Milgate ; III Robert W. ; Consoli Paul Louis, Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber.
  9. Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ) Arora Rikhit (Mesa AZ), Method and apparatus for low temperature deposition of CVD and PECVD films.
  10. Foster Robert F. ; Hillman Joseph T. ; Arora Rikhit, Method and apparatus for low temperature deposition of CVD and PECVD films.
  11. Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Method for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor.
  12. Foster Robert F. ; Hillman Joseph T. ; LeBlanc Rene E., Method for producing titanium thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating s.
  13. Ishiguro, Yoichi; Ooe, Masaharu; Kobayashi, Kohei; Tanaka, Gotaro; Watanabe, Minoru, Method of forming a carbon coated optical fiber with co-current reactant flow.
  14. Foster Robert F. (Phoenix AZ) Hillman Joseph T. (Scottsdale AZ), Method of nitridization of titanium thin films.
  15. Stein Rene,DEX ; Rupp Roland,DEX, Method of producing boron-doped monocrystalline silicon carbide.
  16. Jagannathan, Basanth; Chu, Jack O.; Wuthrich, Ryan W.; Park, Byeongju, Method to increase carbon and boron doping concentrations in Si and SiGe films.
  17. Nishida Shoji (Nagahama JPX), Process for forming functional zinc oxide films using alkyl zinc compound and oxygen-containing gas.
  18. Oudard,Jean Francois, Silicon oxycarbide coatings having durable hydrophilic properties.
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