초록 ▼

The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon waveguide to absorb grazing incidence optical signals passing through the waveguide. The Schottky contact i

The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon waveguide to absorb grazing incidence optical signals passing through the waveguide. The Schottky contact is operated in the avalanche or reverse bias mode to generate a useable electrical signal.

대표청구항 ▼

A photodetector comprising: a crystalline substrate; a first Schottky barrier contact positioned upon said crystalline substrate; a crystalline silicon layer deposited on said crystalline substrate and said first Schottky barrier contact wherein said crystalline silicon layer is formed into a wavegu

A photodetector comprising: a crystalline substrate; a first Schottky barrier contact positioned upon said crystalline substrate; a crystalline silicon layer deposited on said crystalline substrate and said first Schottky barrier contact wherein said crystalline silicon layer is formed into a waveguide for the transmission of optic signals; a second Schottky barrier contact position on top of said waveguide, said first and second Schottky barrier contacts for detecting light transmission through said waveguides; and an Ohmic contact electrically connected to said crystalline silicon layer.