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[미국특허] Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/205
  • H01L-021/36
출원번호 US-0113565 (1987-10-26)
발명자 / 주소
  • Davis Robert F. (Raleigh NC) Carter
  • Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC)
출원인 / 주소
  • North Carolina State University (Raleigh NC 02)
인용정보 피인용 횟수 : 99  인용 특허 : 8

초록 ▼

The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth

대표청구항 ▼

A method of reproducibly controlling the growth of large single crystals of a single polytype of silicon carbide independent of the use of impurities as a primary mechanism for controlling polytype growth, and which crystals are suitable for use in producing electrical devices, the method comprising

이 특허에 인용된 특허 (8) 인용/피인용 타임라인 분석

  1. Hsu George C. (La Crescenta CA) Rohatgi Naresh K. (W. Corine CA), Deposition method for producing silicon carbide high-temperature semiconductors.
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    상세보기
  4. Saga Toshihiko (Saitama JPX) Makita Tsuyoshi (Saitama JPX) Hirono Hisao (Saitama JPX) Inao Akitaka (Saitama JPX), Method of and apparatus for supplying powdery material.
    상세보기
  5. Knippenberg Wilhelmus Franciscus (Eindhoven NL) Verspui Gerrit (Eindhoven NL), Method of manufacturing silicon carbide crystals.
    상세보기
  6. Addamiano, Arrigo, Method of preparing single crystalline cubic silicon carbide layers.
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  7. Rice Dale W. (Horseheads NY), Particulate material feeder for high temperature vacuum system.
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  8. Steiger ; Roger A. ; Stroke ; Frederick G., Porous refractory metal boride article having dense matrix.
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이 특허를 인용한 특허 (99) 인용/피인용 타임라인 분석

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  46. Palmour John W., Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures.
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