초록 ▼

A transfer chamber is provided between MOCVD reaction chamber and load lock chamber, connected to each chamber through an opening for each, for preventing the reaction chamber from the invasion of foreign gases, which may oxydize metals of MOCVD. The load lock chamber can be evacuated or filled with

A transfer chamber is provided between MOCVD reaction chamber and load lock chamber, connected to each chamber through an opening for each, for preventing the reaction chamber from the invasion of foreign gases, which may oxydize metals of MOCVD. The load lock chamber can be evacuated or filled with an inert gas, and has a door to the outside for bringing semiconductor wafers in or out. The transfer chamber is provided with a gas inlet and a gas outlet, through each of them an inert gas is always fed and drained for circulation, and also provided with a transfer mechanism therein for transferring wafers between the load lock chamber and the reaction chamber. Wafers are placed on a susceptor connected to the lid, which is driven by the transfer mechanism. A liner tube for protecting the inner surface of the reaction chamber from undesirable contamination caused by MOCVD reaction may be provided detachably attached to the lid to enclose the wafer. Each opening may be provided with shutter means for sealing each opening while the opening is not sealed by the lid. Oxygen or water vapor undesirably introduced are washed away by the flow of inert gas in the transfer chamber on the way to the reaction chamber.

대표청구항 ▼

Apparatus of metal organic chemical vapor deposition for growing an epitaxial layer of compound semiconductor on a semiconductor wafer, comprising: support means for supporting the wafer, including: a susceptor receiving the wafer; a connecting rod, having first and second ends, the first end being

Apparatus of metal organic chemical vapor deposition for growing an epitaxial layer of compound semiconductor on a semiconductor wafer, comprising: support means for supporting the wafer, including: a susceptor receiving the wafer; a connecting rod, having first and second ends, the first end being connected to said susceptor; and a lid connected to the second end of said connecting rod; a reaction chamber effecting said MOCVD process therein including: a first gas inlet introducing gases for MOCVD processing into said reaction chamber; and a first gas outlet draining said gases; load lock chamber means for loading and unloading the wafer into and from said reaction chamber, respectively, said load lock chamber means including; a second gas inlet allowing introduction of an inert gas into said load lock chamber means, a second gas outlet allowing evacuation of said load lock chamber means; an evacuation pump evacuating said load lock chamber means through said second gas outlet; and a doorway through which said wafer is input or output, said doorway being vacuum-sealable; and a transfer chamber provided between said reaction chamber and said load lock chamber means and including: a third gas inlet allowing introduction of an inert gas into said transfer chamber; a third gas outlet allowing drainage of the inert gas from said transfer chamber so that said transfer chamber is continuously replenished by the inert gas introduced through said third gas inlet and drained through said third gas outlet; a first opening connecting said transfer chamber to said load lock chamber means, through which said wafer is input to or output from said transfer chamber and being vacuum-sealable by said lid; a second opening connecting said transfer chamber to said reaction chamber, through which said wafer is input to or output from said reaction chamber and being vacuum-sealable; and transfer means for transferring said supporting means from said load lock chamber into said reaction chamber and from said reaction chamber into said load lock chamber, said transfer chamber being fed and filled with an inert gas, preventing the invasion of foreign gas from the outside into said reaction chamber.