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Batch processing of semiconductor wafers utilizing a gas phase etching with anhydrous hydrogen fluoride gas flowing between wafers in a wafer carrier. The etching may take place in a bowl with the wafer carrier mounted on a rotor in the closed bowl. The etchant gas may include a small amount of wate

Batch processing of semiconductor wafers utilizing a gas phase etching with anhydrous hydrogen fluoride gas flowing between wafers in a wafer carrier. The etching may take place in a bowl with the wafer carrier mounted on a rotor in the closed bowl. The etchant gas may include a small amount of water vapor, along with the anhydrous hydrogen fluoride gas, as may be needed to commence the etching process. The etching may take place with the wafers arranged in a stack in the wafer carrier and extending along or on the rotation axis.

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In the art of gas phase etching of semiconductor wafers for removing portions of the oxide films on such wafers, the method consisting in mounting a multiplicity of such semiconductor wafers into a wafer carrier wherein the wafers are in spaced and confronting relation with each other, and supplying

In the art of gas phase etching of semiconductor wafers for removing portions of the oxide films on such wafers, the method consisting in mounting a multiplicity of such semiconductor wafers into a wafer carrier wherein the wafers are in spaced and confronting relation with each other, and supplying etchant gas including anhydrous hydrogen fluoride gas to flow between the wafers and expose portions of the wafers to the etchant gas for etching portions of the oxide films thereon.