초록 ▼

A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 Åat its maximum. It may also have an etching rate of 20 Å/sec. when etched with a mixture of HF, HNO3

A semiconductor device comprises a semiconductor layer of a polycrystalline silicon thin film containing not more than 3 atomic % hydrogen atoms and having a surface unevenness of not more than 800 Åat its maximum. It may also have an etching rate of 20 Å/sec. when etched with a mixture of HF, HNO3 and glacial acetic acid (1:3:6).

대표청구항 ▼

A semiconductor device which comprises a substrate and a semiconductor layer of a polycrystalline silicon thin film formed on the substrate, said film containing hydrogen atoms in an amount of not more than 3 atomic % and having a surface unevenness of substantially not more than 800 Åat its maximum

A semiconductor device which comprises a substrate and a semiconductor layer of a polycrystalline silicon thin film formed on the substrate, said film containing hydrogen atoms in an amount of not more than 3 atomic % and having a surface unevenness of substantially not more than 800 Åat its maximum, and said semiconductor layer of a polycrystalline silicon thin film constituting the main part of the semiconductor device.