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Semiconductor integrated circuit 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/78
출원번호 US-0090210 (1987-08-27)
우선권정보 JP-0154069 (1983-08-25)
발명자 / 주소
  • Ohmi Tadahiro (No 2-1-17-301
  • Komegabukuro Sendai-shi
  • Miyagi-ken JPX)
인용정보 피인용 횟수 : 29  인용 특허 : 3

초록

A semiconductor integrated circuit includes an insulated-gate transistor serving as a driving transistor and composed of source and drain regions of one conductivity type with a high impurity concentration, a channel region disposed between the source and drain regions, an insulating layer covering

대표청구항

A semiconductor integrated circuit comprising an insulated-gate transistor serving as a driving transistor and composed of source and drain regions of one conductivity type and a high impurity concentration, a channel region disposed between said source and drain regions, an insulating layer coverin

이 특허에 인용된 특허 (3)

  1. Van Ackeren Joseph (Allison Park PA), Coke oven door sealing system.
  2. Ohmura Yamichi (Sagamihara JPX), Regrowing selectively formed ion amorphosized regions by thermal gradient.
  3. Uchida Yukimasa (Yokohama JPX), SOS MOSFET With self-aligned channel contact.

이 특허를 인용한 특허 (29)

  1. Voldman Steven Howard, 3-D CMOS-on-SOI ESD structure and method.
  2. Voldman Steven Howard, 3-D CMOS-on-SOI ESD structure and method.
  3. Rutten Matthew J. ; Voldman Steven H., Electrical contact to buried SOI structures.
  4. Rutten Matthew J. ; Voldman Steven H., Electrical contact to buried SOI structures.
  5. Forester, Lynn; Hendricks, Neil H.; Choi, Dong-Kyu, Electron-beam processed films for microelectronics structures.
  6. Keshavarzi, Ali; De, Vivek K.; Narendra, Siva G., Insulated channel field effect transistor with an electric field terminal region.
  7. Ipri Alfred C. (Princeton NJ) Napoli Louis S. (Hamilton Square NJ), Low leakage silicon-on-insulator CMOS structure and method of making same.
  8. Chen, Young Il, Method for fabricating capacitor of semiconductor device.
  9. Cheng-Chen Calvin Hsueh ; Shih-Ked Lee, Method for manufacturing semiconductor device containing a silicon-rich layer.
  10. Zhang,Ying; Doris,Bruce B.; Kanarsky,Thomas Safron; Ieong,Meikei; Kedzierski,Jakub Tadeusz, Method of fabricating sectional field effect devices.
  11. Hirtz Jean-Pierre (l\Haye les Roses FRX) Pribat Didier (Sevres FRX), Method of manufacture transistor having gradient doping during lateral epitaxy.
  12. Morihara Toshinori,JPX, Method of manufacturing a DRAM having an SOI structure.
  13. Hsu,Louis L.; Kuang,Jente B.; Flaker,Roy Childs, Methods to improve the operation of SOI devices.
  14. Andres Bryant ; Edward J. Nowak ; Minh H. Tong, SOI pass-gate disturb solution.
  15. Bryant Andres ; Nowak Edward J. ; Tong Minh H., SOI pass-gate disturb solution.
  16. Sarma Kalluri R. (Mesa AZ) Liu Michael S. (Bloomington MN), SOI substrate fabrication.
  17. Zhang,Ying; Doris,Bruce B.; Kanarsky,Thomas Safron; Ieong,Meikei; Kedzierski,Jakub Tadeusz, Sectional field effect devices.
  18. Zhang, Ying; Doris, Bruce B.; Kanarsky, Thomas Safron; Ieong, Meikei; Kedzierski, Jakub Tadeusz, Sectional field effect devices and method of fabrication.
  19. Usuda,Koji; Takagi,Shinichi, Semiconductor apparatus having first and second gate electrodes.
  20. Ohmi, Tadahiro; Teramoto, Akinobu; Wakamatsu, Hidetoshi; Kobayashi, Yasuo, Semiconductor device and method for manufacturing the same.
  21. Hsueh Cheng-Chen Calvin ; Lee Shih-Ked, Semiconductor device containing a silicon-rich layer.
  22. Matsuki, Takeo, Semiconductor device having transistors each having gate electrode of different metal ratio and production process thereof.
  23. Shunpei Yamazaki JP; Akiharu Miyanaga JP; Jun Koyama JP; Takeshi Fukunaga JP, Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method.
  24. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method.
  25. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Semiconductor thin film and its manufacturing method and semiconductor device and its manufacturing method.
  26. Aitken John M. ; Mittl Steven W. ; Strong Alvin W., Silicon-on-insulator non-volatile random access memory device.
  27. Yamazaki,Shunpei; Miyanaga,Akiharu; Koyama,Jun; Fukunaga,Takeshi, Static random access memory using thin film transistors.
  28. Yamazaki, Shunpei; Miyanaga, Akiharu; Koyama, Jun; Fukunaga, Takeshi, Thin film semiconductor device and its manufacturing method.
  29. Loh, Wei-Yip; Coss, Brian; Jeon, Kanghoon, Tunneling field-effect transistor with direct tunneling for enhanced tunneling current.
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