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특허 상세정보

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VLS Fiber growth process

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) C01B-031/36    C01B-025/18   
미국특허분류(USC) 156/607 ; 156/609 ; 156/612 ; 156/614
출원번호 US-0311454 (1989-02-16)
발명자 / 주소
출원인 / 주소
인용정보 피인용 횟수 : 40  인용 특허 : 7
초록
▼

A method for preparing substrates for VLS fiber producing reactions and a method for preparing SiC fibers by the VLS process. The first method includes the steps of forming an alcohol sol containing a fiber growth promoter material precursor, applying the sol to at least one surface of the substrate and drying the sol. More particularly, the steps can include forming a sol of colloidal hydrous metal oxide particles in a liquid, the metal oxide being a fiber growth promoter material precursor and the liquid being capable of dissolving a salt of the metal ...

대표
청구항
▼

A method of preparing a non-metallic, high temperature resistant substrate for a VLS fiber producing reaction comprising the steps of: forming a solution of a metal salt in an alcohol; adding a base to said solution to precipitate out a colloidal suspension of hydrous metal oxide catalyst precursor particles to form an alcohol sol capable of wetting the substrate and forming catalyst particles having an average size of at least about 20 microns during the subsequent VLS fiber producing reaction; applying said sol to at least one surface of the substrate;...

이 특허에 인용된 특허 (7)

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  2. Knippenberg Wilhelmus Franciscus (Eindhoven NL) Verspui Gerrit (Eindhoven NL). Filamentary silicon carbide crystals by VLS growth in molten iron. USP1977034013503.
  3. Kalinowski Marie R. (Granville OH) Nishioka Gary M. (Pataskala OH). Method for applying porous, metal oxide coatings to relatively nonporous fibrous substrates. USP1988034732879.
  4. Shalek Peter D. (Los Alamos NM) Katz Joel D. (Niagara Falls NY) Hurley George F. (Los Alamos NM). Prealloyed catalyst for growing silicon carbide whiskers. USP1988124789537.
  5. Yamamoto Akira (Nagoya JPX). Process for preparing silicon carbide whiskers. USP1985024500504.
  6. Jagota Sujata (Ithaca NY) Raj Rishi (Ithaca NY). Producing alpha-alumina whiskers. USP1989024806198.
  7. Keiser Bruce A. (Naperville IL). Stable acidic and alkaline metal oxide sols. USP1986094612138.

이 특허를 인용한 특허 피인용횟수: 40

  1. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX. Active Matry Display. USP2001096285042.
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  3. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX. Display switch with double layered gate insulation and resinous interlayer dielectric. USP2001116316810.
  4. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki. Fabrication method of semiconductor device. USP2008097422630.
  5. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki. Fabrication method of semiconductor device. USP2006067056381.
  6. Desai, Tejal; Daniels, R. Hugh; Sahi, Vijendra. Medical device applications of nanostructured surfaces. USP2010097803574.
  7. Dubrow, Robert S.; Bock, Lawrence A.; Daniels, R. Hugh; Hardev, Veeral D.; Niu, Chunming; Sahi, Vijendra. Medical device applications of nanostructured surfaces. USP2015028956637.
  8. Dubrow, Robert S.; Bock, Lawrence A.; Daniels, R. Hugh; Hardev, Veeral D.; Niu, Chunming; Sahi, Vijendra. Medical device applications of nanostructured surfaces. USP2011077972616.
  9. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki. Method for fabricating a semiconductor device. USP2006117141491.
  10. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki. Method for fabricating a semiconductor device. USP2006057037811.
  11. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization. USP2002106465287.
  12. Lee Shuit-tong,HKX ; Lee Chun-Sing,HKX ; Wang Ning,HKX ; Bello Igor,HKX ; Lai Carol Hau Ling,HKX ; Zhou Xing Tai,CNX ; Au Frederick Chi Kan,HKX. Method for growing beta-silicon carbide nanorods, and preparation of patterned field-emitters by chemical vapor depositon (CVD). USP2001046221154.
  13. Ohtani, Hisashi; Miyanaga, Akiharu; Fukunaga, Takeshi; Zhang, Hongyong. Method for manufacturing a semiconductor device. USP2011087998844.
  14. Ohtani,Hisashi; Miyanaga,Akiharu; Fukunaga,Takeshi; Zhang,Hongyong. Method for manufacturing a semiconductor device. USP2006026998639.
  15. Ohtani, Hisashi; Miyanaga, Akiharu; Zhang, Hongyong; Yamaguchi, Naoaki. Method for manufacturing semiconductor device. USP2010077749819.
  16. Ohtani, Hisashi; Miyanaga, Akiharu; Zhang, Hongyong; Yamaguchi, Naoaki. Method for manufacturing semiconductor device with crystallization of amorphous silicon. USP2005046884698.
  17. Kim Junsu (Seoul KRX) Chung Bumgoo (Poksan-dong KRX). Method for preparing a preform for a composite material. USP1997045620511.
  18. Yamazaki,Shunpei; Ohtani,Hisashi; Hamatani,Toshiji. Method of manufacturing a semiconductor device. USP2006117135741.
  19. Daniels, R. Hugh; Dubrow, Robert S.; Enzerink, Robert; Li, Esther; Sahi, Vijendra; Goldman, Jay L.; Parce, J. Wallace. Resorbable nanoenhanced hemostatic structures and bandage materials. USP2012118304595.
  20. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji. Semiconductor active region of TFTs having radial crystal grains through the whole area of the region. USP2010037679087.
  21. Yamazaki Shunpei,JPX ; Teramoto Satoshi,JPX ; Koyama Jun,JPX ; Ogata Yasushi,JPX ; Hayakawa Masahiko,JPX ; Osame Mitsuaki,JPX. Semiconductor device and fabrication method thereof. USP2001056225152.
  22. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki. Semiconductor device and fabrication method thereof. USP2003046541315.
  23. Shunpei Yamazaki JP; Satoshi Teramoto JP; Jun Koyama JP; Yasushi Ogata JP; Masahiko Hayakawa JP; Mitsuaki Osame JP; Hisashi Ohtani JP; Toshiji Hamatani JP. Semiconductor device and its manufacturing method. USP2002116478263.
  24. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji. Semiconductor device and its manufacturing method. USP2010057709837.
  25. Yamazaki, Shunpei; Teramoto, Satoshi; Koyama, Jun; Ogata, Yasushi; Hayakawa, Masahiko; Osame, Mitsuaki; Ohtani, Hisashi; Hamatani, Toshiji. Semiconductor device and its manufacturing method. USP2004066744069.
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  29. Yamazaki,Shunpei; Teramoto,Satoshi; Koyama,Jun; Ogata,Yasushi; Hayakawa,Masahiko; Osame,Mitsuaki; Ohtani,Hisashi; Hamatani,Toshiji. Semiconductor device and method for fabricating the same. USP2008117456056.
  30. Miyanaga, Akiharu; Ohtani, Hisashi; Takemura, Yasuhiko. Semiconductor device and method for manufacturing the same. USP2010047700421.
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  37. Ohtani,Hisashi; Miyanaga,Akiharu; Zhang,Hongyong; Yamaguchi,Naoaki. Semiconductor device with residual nickel from crystallization of semiconductor film. USP2007067235828.
  38. Hisashi Ohtani JP; Akiharu Miyanaga JP; Takeshi Fukunaga JP; Hongyong Zhang JP. Semiconductor thin film transistor with crystal orientation. USP2002016335541.
  39. Michael B. Olesen ; Mario E. Bran. Semiconductor wafer cleaning system. USP2002046378534.
  40. Sung, Chien-Min. SiCN compositions and methods. USP2003106632477.

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