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NTIS 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0254149 (1988-10-06) |
우선권정보 | FR-0014742 (1987-10-19); FR-0001399 (1988-01-29); FR-0004727 (1988-03-30) |
발명자 / 주소 |
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출원인 / 주소 |
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인용정보 | 피인용 횟수 : 21 인용 특허 : 1 |
The invention is directed to a process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m2ㆍg-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, an
A process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m2ㆍg-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, and for catalytic reactions at
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