초록 ▼

The invention is directed to a process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m2ㆍg-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, an

The invention is directed to a process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m2ㆍg-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, and for catalytic reactions at elevated temperature which can attain 1000°C., the process comprising reacting vapors of silicon monoxide SiO on carbon, being characterized by: generating vapors of SiO in a first reaction zone by heating a mixture SiO2+Si at a temperature of between 1100°and 1400°C., under a pressure of between 0.1 and 1.5 hPa; and, in a second reaction zone, contacting the SiO vapors with reactive carbon in the divided state with a specific surface area that is at least equal to 200 m2ㆍg-1 at a temperature of between 1100°and 1400°C. Preferably, the reactive carbon is doped by an addition of from 1 to 10% by weight of a metallic element selected from uranium, cerium, titanium, zirconium, hafnium and lanthanides.

대표청구항 ▼

A process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m2ㆍg-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, and for catalytic reactions at

A process for the production of fine grains of silicon carbide which are formed by an agglomerate of submicronic grains having a specific surface area that is at least 100 m2ㆍg-1, which are intended in particular to serve as a carrier for catalysts for petrochemistry, and for catalytic reactions at elevated temperature which can attain 1000°C., the process comprising reacting vapours of silicon monoxide SiO on carbon by the steps of: (a) generating vapours of SiO in a first reaction zone by heating a mixture of SiO2+Si at a temperature of between 1100°and 1400°C., under a pressure of between 0.1 and 1.5 hPa; and (b) contacting in a second reaction zone at a temperature of between 1100°and 1400°C., the SiO vapours generated in said first reaction zone with finely divided reactive carbon with a specific surface area that is equal to or greater than 200 m2ㆍg-1. Silicon carbide catalyst carrier produced by the process of claim 1.