초록 ▼

A titanium-tungsten-nitride/titanium-tungsten/gold (TiWN/TiW/Au) packaging interconnect metallization scheme is used to provide electrical contact to chip level interconnect metallization on a semiconductor substrate. The TiWN/TiW/Au packaging interconnect metallization scheme provides for good adhe

A titanium-tungsten-nitride/titanium-tungsten/gold (TiWN/TiW/Au) packaging interconnect metallization scheme is used to provide electrical contact to chip level interconnect metallization on a semiconductor substrate. The TiWN/TiW/Au packaging interconnect metallization scheme provides for good adhesion and barrier properties that withstand high temperatures and improve the reliability of the semiconductor chip. The TiWN layer provides good adhesion to the chip level interconnect metallization and the passivation layer. It also provides improved barrier properties to prevent the diffusion of other metal atoms through it. The TiW layer provides good adhesion to the gold metal layer. A gold bump may be electroplated to the gold layer and automatically bonded to a conductive lead of a tape in TAB packaging; or a wire bonded to the gold layer in conventional packaging.

대표청구항 ▼

A method of fabricating a structure for providing adhesion and barrier properties to a semiconductor substrate having a surface, comprising the steps of: providing a first conductor layer made of a conductive metal on at least a portion of the surface of the substrate; forming a passivation layer on

A method of fabricating a structure for providing adhesion and barrier properties to a semiconductor substrate having a surface, comprising the steps of: providing a first conductor layer made of a conductive metal on at least a portion of the surface of the substrate; forming a passivation layer on the surface of the substrate and the first conductor layer, and having at least one opening to the first conductor layer; forming a second conductor layer made of titanium-tungsten-nitride on the first conductor layer and the passivation layer; forming a third conductor layer made of titanium-tungsten on the second conductor layer, and; forming a fourth conductor layer made of a conductive metal on the third conductor layer.