[특허]Method of fabricating back surface point contact solar cells

[미국특허] Method of fabricating back surface point contact solar cells 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-031/18
출원번호	US-0272130 (1988-11-14)
발명자 / 주소	Swanson Richard M. (Los Altos CA)
출원인 / 주소	Electric Power Research Inst. Corp. of District of Columbia (Palo Alto CA 02) Board of Trustees of the Leland Stanford California Corporation (Stanford CA 02)
인용정보	피인용 횟수 : 136 인용 특허 : 16

초록 ▼

A back surface point contact silicon solar cell having improved characteristics is fabricated by hydrogenating a silicon-silicon oxide interface where hydrogen atoms are diffused through silicon nitride and silicon oxide passivating layers on the surface of a silicon substrate. In carrying out the hydrogenation, the substrate and passivation layers are placed in a hydrogen atomsphere at an elevated temperature of at least 900°C. whereby hydrogen atoms diffuse through the two passivation layers. Self-alignment techniques are employed in forming small-geometry doped regions in the surface of the silicon substrate for the p-n junctions of the solar cell. Openings are formed through the passivation layers to expose first surface areas on the substrate, and a doped silicon oxide layer is then formed over the passivation layers and on the exposed surface areas. Portions of the first doped layer on the two passivation layers are removed and then second portions of the two passivation layers are removed, thereby exposing second surface areas. A second doped silicon oxide layer is then formed over the passivation layers and on the second exposed surface areas. Dopants from the two doped silicon oxide layers are then diffused into the first and second surface layers to form p and n diffused regions in the surface of the substrate. Thereafter, the first and second doped silicon oxide layers are removed by a preferential etchant which does not remove the silicon nitride layer, thereby exposing the first and second surface areas. A two-level metal interconnect structure is then formed for separately contacting the first surface areas and the second surface areas.

대표청구항 ▼

A method of fabricating a back surface point contact solar cell, comprising the steps of (a) providing a substrate of silicon having two major opposing surfaces, (b) forming a silicon oxide layer on at least a first of said major surfaces, (c) forming a silicon nitride layer on said silicon oxide layer, (d) removing first portions of said layers thereby exposing first surface areas on said first major surface, (e) forming a first doped layer with a first conductivity type dopant therein on said surface areas, (f) removing second portions of said layers, thereby exposing second surface areas on said first major surface, (g) forming a second doped layer with a second conductivity type dopant therein over on said second surface areas, (h) heating said substrate and thereby diffusing dopant from said first layer into said first surface areas and diffusing dopant from said second doped layer into said second surface areas, (i) subjecting said substrate and said layers to an elevated temperature of at least 900°C. in a hydrogen atmosphere, thereby hydrogenating the interface between said major surface and said silicon oxide layer, (j) removing said first and second doped layers by a preferential etchant which does not remove said silicon nitride, and (k) forming a two-level metal interconnect structure for separately contacting said first surface areas and said second surface areas.

이 특허에 인용된 특허 (16) 인용/피인용 타임라인 분석

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Swanson Richard M. (Los Altos CA), Thermophotovoltaic converter and cell for use therein.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

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