초록 ▼

A high frequency switch includes at least two transistors connected in series. By connecting the transistors in series the power handling capability can be increased by a factor of N2, where N is the number of transistors connected in series. The series is isolated by high impedance resistors and th

A high frequency switch includes at least two transistors connected in series. By connecting the transistors in series the power handling capability can be increased by a factor of N2, where N is the number of transistors connected in series. The series is isolated by high impedance resistors and the transistors may be gallium arsenide field-effect transistors.

대표청구항 ▼

A high frequency switch comprising: at least two field-effect transistors, each including a control electrode and two other electrodes, connected to each other in series between a high frequency electric signal source and reference potential means for providing a reference potential, said two other

A high frequency switch comprising: at least two field-effect transistors, each including a control electrode and two other electrodes, connected to each other in series between a high frequency electric signal source and reference potential means for providing a reference potential, said two other electrodes of said at least two field effect transistors forming the series connection between said transistors; first means for biasing the control electrode of each of said transistors to cause components of an electric signal which exceed a threshold frequency to flow from said electric signal source to said reference potential means through a channel between said two other electrodes of each of said transistors, said first means having an impedance which is high compared to the internal impedances of said transistors; and second means connected between each junction of said series connection of said at least two transistors and said reference potential means for establishing an impedance between each junction of said series connection and said reference potential which is high compared to the internal impedances of said transistors.