초록 ▼

The invention relates to a method of growing a single crystal CaF2 film on a single crystal Si substrate having a principal plane of (100). According to the invention, the substrate temperature is first set at 550°-600°C. to grow a first CaF2 film (first stage) and the substrate temperature is then

The invention relates to a method of growing a single crystal CaF2 film on a single crystal Si substrate having a principal plane of (100). According to the invention, the substrate temperature is first set at 550°-600°C. to grow a first CaF2 film (first stage) and the substrate temperature is then raised to 750°C. or higher to grow a second CaF2 film on the first CaF2 film (second stage), thus the growth of the CaF2 films is performed separately in two stages. Since, in the second stage, the growth of CaF2 film is possible even at higher substrate temperature, the method of growing according to the invention makes it possible to grow a single crystal CaF2 film with flat surface morphology and excellent crystal quality.

대표청구항 ▼

A method of growing a CaF2 film comprising; growing on a single crystal Si substrate with a principle plane of (100) a first single crystal CaF2 film at the substrate temperature of about 550°to 600°C. and growing on the first single crystal CaF2 film a second single crystal CaF2 film at the substra

A method of growing a CaF2 film comprising; growing on a single crystal Si substrate with a principle plane of (100) a first single crystal CaF2 film at the substrate temperature of about 550°to 600°C. and growing on the first single crystal CaF2 film a second single crystal CaF2 film at the substrate temperature of about 750°C. of higher.