초록 ▼

A semiconductor substrate heater process and apparatus are disclosed for uniformly heating semiconductor substrates. A device for supporting the back side of an IC wafer in a reaction chamber and for conduction heating therein and auxiliary heat directed to the front side of the substrate by reflect

A semiconductor substrate heater process and apparatus are disclosed for uniformly heating semiconductor substrates. A device for supporting the back side of an IC wafer in a reaction chamber and for conduction heating therein and auxiliary heat directed to the front side of the substrate by reflection from the inside surface of the reaction chamber and/or by an auxiliary heating source within the reaction chamber are disclosed.

대표청구항 ▼

A reaction apparatus for conducting treatment of thin film materials onto semiconductor substrates, said apparatus comprising: a reaction chamber; a substrate supporting and heating assembly in said chamber comprising: a heating container composed of thermally conductive material and having a flat w

A reaction apparatus for conducting treatment of thin film materials onto semiconductor substrates, said apparatus comprising: a reaction chamber; a substrate supporting and heating assembly in said chamber comprising: a heating container composed of thermally conductive material and having a flat wall for heating of semiconductor substrates, support means for supporting the back side of at least one semiconductor substrate against the external surface of said wall at a substrate heating location, heat transfer means comprising a low melting point, high boiling point metal contained within said container at least to the level of the top of said substrate heating location and in contact with said wall, heating means for heating said heat transfer means; means for directing auxiliary heat to the front side of said semiconductor substrate and transport means for transporting reactant materials into and out of said chamber whereby heat is transferred from said means for directing heat to the front side of said substrate and from said heating means through said metal to said container wall to heat said external surface of said container wall to a substantially uniform temperature across said substrate heating location for uniformly heating the back side of said substrate during reaction with reactant materials.