A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloa
A processing apparatus includes a processing chamber and an insertion jig for inserting an object to be processed into the processing chamber. The processing chamber and the insertion jig are adapted to be individually movable relative to a heating section, so that the operation of loading and unloading the object into and from the processing chamber effected by the insertion jig is conducted outside the heating section, thereby preventing the outside air from being induced to enter the heated processing chamber, together with the object of the processing, and thus avoiding the occurrence of various problems, for example, the object of processing being disorderly oxidized by the oxygen contained in the outside air, and the foreign matter contained in the outside air being undesirably attached to the surface of the object, so as to obtain excellent processing results. Further, the insertion jig, which is adapted to insert an object to be processed into the processing chamber through an opening provided therein, is provided with an auxiliary tube which is movable relative to the insertion jig in the direction of movement of the jig and which is detachably connected to the opening of the processing chamber, thereby preventing the pg,2 outside air from being induced to enter the heated processing chamber, together with the object of processing, and thus avoiding various problems, e.g., the object of processing being undesirably oxidized by the oxygen contained in the outside air, and the foreign matter contained in the outside air being attached to the surface of the object of processing. In consequence, it is possible to obtain excellent processing results.
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A method for treating semiconductor wafers using a vertical thermal treatment furnace, the thermal treatment furnace including cylindrical heating means having a cylindrical cavity therethrough lengthwise in which the semiconductor wafers are situated during a thermal treatment in the vertical therm
A method for treating semiconductor wafers using a vertical thermal treatment furnace, the thermal treatment furnace including cylindrical heating means having a cylindrical cavity therethrough lengthwise in which the semiconductor wafers are situated during a thermal treatment in the vertical thermal treatment furnace, the cavity having an axis which extends substantially in the vertical direction, the cavity having an opening, for loading and unloading wafers, disposed at one end thereof, the furnace also including a wafer holder for loading and unloading the wafers into and out of the cavity, the wafers being supported by the wafer holder and disposed along the axis of the cavity, the method comprising steps of: (a) arranging the wafers, that are supported by the wafer holder, into a cylindrical process tube, the process tube having a diameter smaller than the cavity, the arranging the wafers in the process tube being performed with the process tube substantially outside the cavity; (b) moving the wafers relative to the cavity, supported by the wafer holder, so as to position the wafers in the cavity, the wafers being moved into the cavity through the opening, both the process tube and wafers being moved to position the wafers in the cavity; (c) heat-treating the wafers in the cavity at a predetermined temperature; and (d) unloading the wafers in the cavity out of the cavity, through said opening.
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이 특허에 인용된 특허 (3)
Dozier Alfred R. (9075 Meadowrun Way San Diego CA 92129), Chemical vapor deposition reactor.
Roberson ; Jr. Glenn A. (Hollister CA) Genco Robert M. (Atlanta GA) Mundt G. Kyle (Duluth GA), Docking and environmental purging system for integrated circuit wafer transport assemblies.
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