초록 ▼

A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on

A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.

대표청구항 ▼

A process for producing a SiC bipolar transistor disposed on a single-crystal Si substrate, comprising the following steps: growing at least one single crystal film of SiC on a single crystal substrate of Si while providing three regions of alternating opposite conductivity types in said SiC single-

A process for producing a SiC bipolar transistor disposed on a single-crystal Si substrate, comprising the following steps: growing at least one single crystal film of SiC on a single crystal substrate of Si while providing three regions of alternating opposite conductivity types in said SiC single-crystal film to form the entire operational area of a bipolar transistor in said SiC single-crystal film disposed on said Si substrate; and forming electrodes for said bipolar transistor on said SiC single-crystal film by etching said SiC single-crystal film to expose portions of each of said three regions, and positioning emitter, collector and base electrodes, respectively, on said exposed portions of said three regions to produce a bipolar transistor in said SiC single-crystal film disposed on said Si single-crystal substrate. A process for producing an insulated gate field effect transistor, comprising the following steps: growing a SiC single-crystal film of one conductivity type on a Si single-crystal substrate of the opposite conductivity type; implanting impurity ions of said opposite conductivity type within said SiC single-crystal film to form source and drain regions of said opposite conductivity type; thermally oxidizing the surface of said SiC single-crystal film to form a silicon dioxide film; removing a portion of said silicon dioxide film positioned on said source and drain regions to expose said source and drain regions; and, forming a source electrode on said source region, a drain electrode on said drain region, and a gate electrode on said silicon dioxide film between said source and drain electrodes.