초록 ▼

A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of t

A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose.

대표청구항 ▼

A method of manufacturing metal film bridge devices for the ignition of explosive and energetic materials comprising the steps of: defining a bridge shape from a first material on an insulating substrate, said first material being an insulator that intrinsically conducts when heated; selectively dep

A method of manufacturing metal film bridge devices for the ignition of explosive and energetic materials comprising the steps of: defining a bridge shape from a first material on an insulating substrate, said first material being an insulator that intrinsically conducts when heated; selectively depositing a layer of tungsten over the entire bridge shape; and depositing a pair of conductive lands over the tungsten layer such that said lands are spaced apart one from another.