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Electrodes for electrical ceramic oxide devices 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01G-004/10
  • H01G-007/00
  • C23F-007/00
출원번호 US-0380942 (1989-07-17)
발명자 / 주소
  • Shepherd William H. (Mt. View CA)
출원인 / 주소
  • National Semiconductor Corporation (Santa Clara CA 02)
인용정보 피인용 횟수 : 74  인용 특허 : 4

초록 ▼

Electrodes composed of ruthenium, iridium, osmium, or rhodium and the electrically conductive oxides of these metals are particularly well-suited to use in electrical ceramic oxide devices because of the low resistivity of the oxides and the stability of the oxides under the processing conditions ne

대표청구항 ▼

An electrical ceramic oxide device including a first body of an electrical ceramic oxide material; an electrical conductive lead means; and a second body of an interfacing material connecting said first body to said lead means, wherein said second body includes a first portion of material selected f

이 특허에 인용된 특허 (4)

  1. de Bruin Henderikus Johannes (Bellvue Heights AU) Warble Charles Edward (Glen Waverley AU), Chemical bonding of metals to ceramic materials.
    상세보기
  2. Kaneko Norio (Kashiwa JPX) Niibe Masahito (Yokohama JPX), Composition for dielectric porcelain, dielectric porcelain and capacitor by use of said composition.
    상세보기
  3. Huang Rong F. (Albuquerque NM) Howng Wei-Yean (Albuquerque NM), Dielectric RF devices suited for use with superconductors.
    상세보기
  4. Yamaoka Nobutatsu (Harunamachi JPX) Sasazawa Kazuo (Maebashi JPX), Electroconductive paste to be baked on ceramic bodies to provide capacitors, varistors or the like.
    상세보기

이 특허를 인용한 특허 (74)

  1. Hickert George, Barrier layer to protect a ferroelectric capacitor after contact has been made to the capacitor electrode.
    상세보기
  2. Sandhu Gurtej S. ; Fazan Pierre C., Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for f.
    상세보기
  3. Sandhu, Gurtej S.; Fazan, Pierre C., Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same.
    상세보기
  4. Sandhu,Gurtej S.; Fazan,Pierre C., Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same.
    상세보기
  5. Sandhu,Gurtej S.; Fazan,Pierre C., Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same.
    상세보기
  6. Fazan, Pierre C.; Sandhu, Gurtej S., Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same.
    상세보기
  7. Marsh, Eugene P.; Kraus, Brenda D., Capacitor having RuSixOy-containing adhesion layers.
    상세보기
  8. Summerfelt Scott R., Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes.
    상세보기
  9. Summerfelt Scott R. (Dallas TX), Conductive exotic-nitride barrier layer for high-dielectric-constant material electrodes.
    상세보기
  10. Summerfelt Scott R. ; Reid Jason ; Nicolet Marc ; Kolawa Elzbieta, Conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes.
    상세보기
  11. Spink, Scott A.; Lott, David R.; Fuglevand, William A., Direct liquid fuel cell.
    상세보기
  12. Sawada Kazuo (Osaka JPX) Nakamura Atsushi (Hisai JPX) Okugawa Isao (Suzuka JPX), Electric contact and method for producing the same.
    상세보기
  13. Summerfelt Scott R. (Dallas TX) Beratan Howard R. (Dallas TX), Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics.
    상세보기
  14. Takashi Nakamura JP, Ferroelectric capacitor.
    상세보기
  15. Nakamura Takashi,JPX, Ferroelectric capacitor and a method for manufacturing thereof.
    상세보기
  16. Nakamura Takashi,JPX, Ferroelectric capacitor and a method for manufacturing thereof.
    상세보기
  17. Nakamura Takashi,JPX, Ferroelectric capacitor and a method for manufacturing thereof.
    상세보기
  18. Nakamura,Takashi, Ferroelectric capacitor and a method for manufacturing thereof.
    상세보기
  19. Takashi Nakamura JP, Ferroelectric capacitor and a method for manufacturing thereof.
    상세보기
  20. Summerfelt Scott R. (Dallas TX) Beratan Howard R. (Richardson TX) Kirlin Peter S. (Bethel CT) Gnade Bruce E. (Dallas TX), High-dielectric-constant material electrodes comprising thin platinum layers.
    상세보기
  21. Summerfelt Scott R. (Dallas TX) Beratan Howard R. (Richardson TX) Gnade Bruce E. (Dallas TX), High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers.
    상세보기
  22. Kang Chang-seok,KRX, Integrated circuit ferroelectric memory devices including resistors in periphery region.
    상세보기
  23. Whitaker, Mark R.; Marentette, Leslie Joseph, Interrupt generation and acknowledgment for RFID.
    상세보기
  24. Bailey Richard A., Iridium oxide local interconnect.
    상세보기
  25. Whitaker, Mark R., Low power, low pin count interface for an RFID transponder.
    상세보기
  26. Fazan Pierre C. ; Sandhu Gurtej S., Method for forming a capacitor compatible with high dielectric constant materials having two independent insulative layers.
    상세보기
  27. Pierre C. Fazan ; Gurtej S. Sandhu, Method for forming a capacitor compatible with high dielectric constant materials having two independent insulative layers.
    상세보기
  28. Fazan Pierre C. ; Mathews Viju K., Method for forming a storage cell capacitor compatible with high dielectric constant materials.
    상세보기
  29. Fazan, Pierre C.; Mathews, Viju K., Method for forming a storage cell capacitor compatible with high dielectric constant materials.
    상세보기
  30. Fazan,Pierre C.; Mathews,Viju K., Method for forming a storage cell capacitor compatible with high dielectric constant materials.
    상세보기
  31. Fazan,Pierre C.; Mathews,Viju K., Method for forming a storage cell capacitor compatible with high dielectric constant materials.
    상세보기
  32. Fazan,Pierre C.; Mathews,Viju K., Method for forming a storage cell capacitor compatible with high dielectric constant materials.
    상세보기
  33. Nakamura, Takashi, Method for manufacturing a ferroelectric capacitor.
    상세보기
  34. Marsh, Eugene P., Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics.
    상세보기
  35. Marsh, Eugene P., Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics.
    상세보기
  36. Bailey Richard A., Method of forming iridium oxide local interconnect.
    상세보기
  37. Marsh, Eugene P.; Uhlenbrock, Stefan, Method of forming ruthenium and ruthenium oxide films on a semiconductor structure.
    상세보기
  38. Summerfelt Scott R. (Dallas TX), Method of making conductive amorphous-nitride barrier layer for high-dielectric-constant material electrodes.
    상세보기
  39. Marsh, Eugene P.; Kraus, Brenda D., Method of manufacturing a capacitor having RuSixOy-containing adhesion layers.
    상세보기
  40. Nakamura,Takashi, Method of manufacturing a ferroelectric capacitor having iridium oxide lower electrode.
    상세보기
  41. Takeharu Kuroiwa JP; Tsuyoshi Horikawa JP; Tetsuro Makita JP; Noboru Mikami JP; Teruo Shibano JP, Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium.
    상세보기
  42. Kang Chang-seok,KRX, Methods of fabricating integrated circuit ferroelectric memory devices including a material layer on the upper electrodes of the ferroelectric capacitors thereof.
    상세보기
  43. Cho, Sung-Il; Cho, Choong-rae; Lee, Eun-hong; Yoo, In-kyeong, Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same.
    상세보기
  44. Cho, Sung-Il; Cho, Choong-rae; Lee, Eun-hong; Yoo, In-kyeong, Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same.
    상세보기
  45. Jiang Bo ; Zurcher Peter ; Jones Robert E. ; White Bruce E., Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells.
    상세보기
  46. Nishioka Yasushiro (Tsukuba JPX) Summerfelt Scott R. (Dallas TX) Park Kyung-ho (Tsukuba JPX) Bhattacharya Pijush (Tsukuba JPX), Pre-oxidizing high-dielectric-constant material electrodes.
    상세보기
  47. Brabazon Terry J. ; El-Kareh Badih ; Martin Stuart R. ; Rutten Matthew J. ; Kaanta Carter W., Precision analog metal-metal capacitor.
    상세보기
  48. Vaartstra Brian A., Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide.
    상세보기
  49. Eugene P. Marsh ; Brenda D. Kraus, Process for fabricating RuSixOy-containing adhesion layers.
    상세보기
  50. Marsh, Eugene P.; Kraus, Brenda D, Process for fabricating RuSixOy-containing adhesion layers.
    상세보기
  51. Marsh, Eugene P.; Kraus, Brenda D., Process for fabricating RuSixOy-containing adhesion layers.
    상세보기
  52. Marsh, Eugene P.; Kraus, Brenda D., Process for fabricating RuSixOy-containing adhesion layers.
    상세보기
  53. Jones ; Jr. Robert E. (Austin TX), Process for forming a nonvolatile random access memory array.
    상세보기
  54. Marsh, Eugene P., Process for the formation of RuSixOy-containing barrier layers for high-k dielectrics.
    상세보기
  55. Masahiro Tanaka JP; Miho Ami JP, Process for the manufacturing of oxide electrodes for ferroelectric capacitor.
    상세보기
  56. Spink, Scott A.; Lott, David R.; Wright, Matthew M.; Yemul, Dinesh S.; Fuglevand, William A.; Bayuuk, Shiblihanna I.; Duan, Runrun; Bai, Lijun, Proton exchange membrane fuel cell.
    상세보기
  57. Fuglevand, William A.; Bayyuk, Shibli Hanna I.; Wright, Matthew M., Proton exchange membrane fuel cell and method of forming a fuel cell.
    상세보기
  58. Spink, Scott A.; Lott, David R.; Wright, Matthew M.; Ryan, Eric J.; Yemul, Dinesh S.; Fisher, John M., Proton exchange membrane fuel cell stack and fuel cell stack module.
    상세보기
  59. Spink, Scott A.; Lott, David R.; Wright, Matthew M.; Ryan, Eric J.; Yemul, Dinesh S.; Fisher, John M., Proton exchange membrane fuel cell stack and fuel cell stack module.
    상세보기
  60. Spink, Scott A.; Lott, David R.; Wright, Matthew M.; Ryan, Eric J.; Yemul, Dinesh S.; Fisher, John M., Proton exchange membrane fuel cell stack and fuel cell stack module.
    상세보기
  61. Whitaker, Mark R.; Greefkes, Kirk, RFID interface and interrupt.
    상세보기
  62. Eugene P. Marsh ; Brenda D. Kraus, RuSixOy-containing adhesion layers.
    상세보기
  63. Marsh, Eugene P.; Kraus, Brenda D., RuSixOy-containing adhesion layers and process for fabricating the same.
    상세보기
  64. Marsh, Eugene P.; Kraus, Brenda D., RuSixOy-containing adhesion layers and process for fabricating the same.
    상세보기
  65. Marsh, Eugene P., RuSixOy-containing barrier layers for high-k dielectrics.
    상세보기
  66. Chou,Jung Chuan; Chen,Sheng Hung, Ruthenium oxide electrodes and fabrication method thereof.
    상세보기
  67. Summerfelt Scott R., Sacrificial oxygen sources to prevent reduction of oxygen containing materials.
    상세보기
  68. Horikawa Tsuyosi,JPX ; Makita Tetsuro,JPX ; Kuroiwa Takeharu,JPX ; Mikami Noboru,JPX ; Shibano Teruo,JPX, Semiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygen.
    상세보기
  69. Kuroiwa Takeharu,JPX ; Horikawa Tsuyoshi,JPX ; Makita Tetsuro,JPX ; Mikami Noboru,JPX ; Shibano Teruo,JPX, Semiconductor device which includes a capacitor having a lower electrode formed of iridium or ruthenium.
    상세보기
  70. Marsh, Eugene P.; Uhlenbrock, Stefan, Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide.
    상세보기
  71. Marsh, Eugene P.; Uhlenbrock, Stefan, Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide.
    상세보기
  72. Marsh, Eugene P.; Uhlenbrock, Stefan, Solvated ruthenium precursors for direct liquid injection of ruthenium and ruthenium oxide and method of using same.
    상세보기
  73. Fazan,Pierre C.; Mathews,Viju K., Storage cell capacitor compatible with high dielectric constant materials.
    상세보기
  74. Huffman Maria (Colorado Springs CO), Use of palladium as an adhesion layer and as an electrode in ferroelectric memory devices.
    상세보기

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